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Measurement and evaluation of chirp and linewidth enhancement factor of a 1.3 /spl mu/m quantum dot laser

Hatori, N. / Ishida, M. / Ebe, H. et al. | IEEE | 2004

We measured chirp of quantum dot lasers under 5 Gb/s direct-modulation, and the chirp was less than 2 GHz. From the results and some ...

High power (3W) GaInAs/(AI)GaAs quantum dot tapered laser arrays with high wavelength stability and low divergence

Auzanneau, S.-C. / Calligaro, M. / Krakowski, M. et al. | IEEE | 2004

High power (3W) and low divergence (4/spl deg/ at FWHM) are demonstrated at 990 nm using arrays of index guided GaInAs/(Al)GaAs quantum dot ...

Room Temperature Operation of Patterned InGaAs Quantum Dot Lasers Fabricated by Electron Beam Lithography and Selective Area Epitaxy

Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004

Room temperature operation of InAs-quantum-dot laser utilizing GaAs-photonic-crystal-slab-based line-defect waveguide with optical pump

Sugimoto, Y. / Inoue, K. / Ikeda, N. et al. | IEEE | 2004

Room temperature operation of lasing from optically-pumped InAs quantum dots embedded in a line defect waveguide in a two-dimensional air ...

Room Temperature Operation of InAs-Quantum-Dot Laser utilizing GaAs-Photonic-Crystal-Slab-based Line-Defect Waveguide with Optical Pump

Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004

PbSe quantum-dot-doped phosphate glasses as material for saturable absorbers for 1- to 3-mum spectral region [5449-32]

Kolobkova, E. V. / Lipovskii, A. A. / Melehin, V. G. et al. | British Library Conference Proceedings | 2004

Design of high-speed directly-modulated self-assembled quantum-dot lasers aiming at 40 Gb/s operation: experiments and model

Ishida, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2004

Modulation characteristics of 1.3 /spl mu/m quantum-dot lasers were investigated experimentally and theoretically to evaluate the K-factor ...

Improved gain and loss performance of 1.3 /spl mu/m quantum dot lasers using high growth temperature GaAs spacer layer

Walker, C.L. / Sandall, I.C. / Smowton, P.M. et al. | IEEE | 2004

We demonstrate improved gain and loss performance of 1.3 /spl mu/m In(Ga)As quantum dot laser material using high growth temperature spacer ...

Drastic enhancement of optical non-linearity in InAs quantum dot embedded in photonic crystal waveguide for all-optical switch application

Nakamura, H. / Kanamoto, K. / Nakamura, Y. et al. | IEEE | 2004

InAs quantum dots, embedded in a photonic crystal (PC) waveguide, exhibited 13 dB larger extinction ratio in transmittance than that ...

35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004

We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

1.28 mum InAs/GaAs Quantum Dot Lasers with AlGaAs Cladding Layer Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004

1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004

This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...

Conference Digest. 2004 IEEE 19th International Semiconductor Laser Conference (IEEE Cat. No.04CH37594)

IEEE | 2004

The following topics are dealt with: telecommunication sources; novel semiconductor devices; high-power lasers; quantum dot lasers; UV ...

Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

Gubenko, A.E. / Gadjiev, L.M. / Il'inskaya, N.D. et al. | IEEE | 2004

(/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed. ...

2004 IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581)

IEEE | 2004

program; polarization mode dispersion; microfluidic devices; quantum dot materials and devices; hardware for optical communications; sensor ...

Cyclotron emission imaging of quantum Hall devices

Ikushima, K. / Sakuma, H. / Yoshimura, Y. et al. | IEEE | 2004

of nonequilibrium electrons. Finally, we describe our attempts towards photon counting terahertz microscope with quantum-dot photon detectors ...

Self-assembled DNA molecules conjugated to GaN semiconductor nanostructures for radiative decay engineering

Neogi, A. / Neogi, P.B. / Sarkar, A. et al. | IEEE | 2004

bioconjugated DNA nucleosides sensing units with GaN quantum dots using fluorescent radiative decay engineering via resonant surface plasmon interaction. ...

InAs quantum dot microdisk injection laser

Lidong Zhang, / Hu, E. | IEEE | 2003

An airbridge contacted quantum dot microdisk diode with continuous-wave lasing at 5 K is reported. The threshold current is as low as 43 ...

Wideband polarization insensitivity quantum dot optical amplifier

Kita, T. / Jayavel, P. / Tanaka, H. et al. | IEEE | 2003

Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization ...

Slow-Light in Nonuniform Quantum Dot Waveguide

IEEE | British Library Conference Proceedings | 2003

Slow-light in nonuniform quantum dot waveguide

Ku, P.C. / Chang-Hasnain, C.J. / Kim, J. et al. | IEEE | 2003

We analyzed a new variable all-optical buffer using semiconductor quantum dots (QD). We show that an InAs-InGaAs-GaAs QD waveguide with 20 ...

Quantum dots for lasers, amplifiers and computing

Bimberg, D. | IEEE | 2003

Quantum dots (QDs) enable novel photonic devices like edge and surface emitting lasers, or amplifiers with dramatically improved properties ...

Characteristics of long wavelength quantum dots lasers

Kim, S.M. / Harris, J.S. | IEEE | 2003

In this paper characteristics of long wavelength quantum dots lasers is discussed. Small signal modulation response was measured at room ...

Quantum dots for lasers, amplifiers and computing

Chang, T. Y. / Bimberg, D. H. / Guo li Taiwan da xue et al. | British Library Conference Proceedings | 2003

Quantum dot (InAs/InGaAs DWELL) semiconductor optical amplifier

Bakonyi, Z. / Onishchukov, G. / Tunnermann, A. et al. | IEEE | 2003

In this paper, InAs/InGaAs quantum dot SOA emitting at greater than 1300 nm with gain as high as 18 dB at low with 100 mA pump current was ...

Indium aggregated quantum dot structures in InGaN compounds

Yang, C.C. / Shih-Wei Feng, / Yung-Chen Cheng, et al. | IEEE | 2003

We will summarize the optical characteristics and microstructures of the indium-aggregated quantum dots in InGaN compounds, including ...

Indium Aggregated Quantum Dot Structures in InGaN Compounds

Yang, C. C. / Feng, S.-W. / Cheng, Y.-C. et al. | British Library Conference Proceedings | 2003

Modulation Characteristics of p-doped Quantum Dot Lasers

IEEE | British Library Conference Proceedings | 2003

Linewidth enhancement factor in InGaAs quantum dot amplifiers

Schneider, S. / Borri, P. / Langbein, W. et al. | IEEE | 2003

Two photon absorption in quantum dot infrared photodetector

Wu, Z.K. / Choi, H. / Norris, T.B. et al. | IEEE | 2003

Modulation characteristics of p-doped quantum dot lasers

Deppe, D.G. / Shchekin, O.B. / Ahn, J. et al. | IEEE | 2003

Quantum dot (QD) lasers are advancing and can potentially be important for fiber optic communications because of their novel modulation ...

InAs on InP quantum dots for optoelectronic applications

Reithmaier, J.P. / Schwertberger, R. / Gold, D. et al. | IEEE | 2003

This paper gives an overview about the status of the development of InP-based quantum dot structures and their applications in ...

Gain and carrier distribution in InGaAs quantum dot lasers

Smowton, P.M. | IEEE | 2003

-using measurements of gain and carrier distribution in InGaAs quantum dot laser structures. ...

Gain and Carrier Distribution in InGaAs Quantum Dot Lasers

IEEE | British Library Conference Proceedings | 2003

Growth and optical properties of GaN-based quantum dots

Hyun Jin Kim, / Hyunseok Na, / Soon-Yong Kwon, et al. | IEEE | 2003

GaN-based quantum dots were grown by low-pressure metalorganic chemical vapor depositions. High-density In-rich InGaN/GaN quantum dots were ...

Growth and optical properties of GaN-based quantum dots

Kim, H. J. / Na, H. / Kwon, S.-Y. et al. | British Library Conference Proceedings | 2003

Quasistationary states of an electron in open quantum dots

Lin, M.-C. / Chuu, D.-S. / Guo li Taiwan da xue et al. | British Library Conference Proceedings | 2003

Electrically Injected Photonic Crystal Edge Emitting Quantum Dot Light Source

IEEE | British Library Conference Proceedings | 2003

Quasistationary states of an electron in open quantum dots

Ming-Chieh Lin, / Der-San Chuu, | IEEE | 2003

The quasistationary states of an electron in a spherically N-layered open quantum dot are investigated. A novel complex eigen-solver is ...

Ordered quantum dot arrays on self-organized strain engineered templates

Notzel, R. / Mano, T. / Wolter, J.H. | IEEE | 2003

Investigation of high repetition rate mode-locked quantum dot lasers

Tan, K.T. / Thompson, M.G. / Marinelli, C. et al. | IEEE | 2003

Passive mode-locking of quantum dot laser at 18 GHz is reported for the first time. The generation of reduced jitter, Fourier transform ...

Electrically injected photonic crystal edge emitting quantum dot light source

Topolancik, J. / Pradhan, S. / Yu, P.-C. et al. | IEEE | 2003

presents a novel electrically injected 2D PC-based quantum dot edge emitting light source with coupled PC waveguide that avoids carrier ...

Investigation of High Repetition Rate Mode-Locked Quantum Dot Lasers

IEEE | British Library Conference Proceedings | 2003

Ordered Quantum Dot Arrays on Self-Organized Strain Engineered Templates

IEEE | British Library Conference Proceedings | 2003

1.3/spl mu/m electroluminescence from MOCVD-grown quantum dots

Wong, P.S. / Xin, Y. / Birudavolu, S. et al. | IEEE | 2003

Use of quantum dot nanocrystals for spectrally encoded optical data storage

Chon, J.W.M. / Gu, M. | IEEE | 2003

In this paper, we demonstrate the spectral encoding capability of quantum dot nanocrystals (QDs). We mixed two different sizes of QDs in a ...