Recognizing GaAs semiconductor's wide energy band gap, an operational amplifier IC using AlGaAs/GaAs HBT ws designed and experimentally produced in order to operate it under high temperature, with high current and with low noise. This Operational Amplifier IC is can be operated at 250 Cel and generates an output sink current capable of driving low impedance loads, and its noise level is nearly equal to that of silicon low-noise amplifier. This study has demonstrated that AlGaAs/GaAs HBT is very promising as a device to be operable under high-temperature environment.
An operational amplifier IC using AlGaAs/GaAs HBTs for automobiles
Ein Operationsverstärker in integrierter Schaltung mit Heteroübergangsbipolartransistoren aus AlGaAs/GaAs für die Kraftfahrzeugelektronik
1993
6 Seiten, 8 Bilder, 1 Tabelle, 3 Quellen
Conference paper
English
Charge-collection mechanisms of AlGaAs/GaAs HBTs
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