Recognizing GaAs semiconductor's wide energy band gap, an operational amplifier IC using AlGaAs/GaAs HBT ws designed and experimentally produced in order to operate it under high temperature, with high current and with low noise. This Operational Amplifier IC is can be operated at 250 Cel and generates an output sink current capable of driving low impedance loads, and its noise level is nearly equal to that of silicon low-noise amplifier. This study has demonstrated that AlGaAs/GaAs HBT is very promising as a device to be operable under high-temperature environment.


    Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    An operational amplifier IC using AlGaAs/GaAs HBTs for automobiles


    Additional title:

    Ein Operationsverstärker in integrierter Schaltung mit Heteroübergangsbipolartransistoren aus AlGaAs/GaAs für die Kraftfahrzeugelektronik


    Contributors:


    Publication date :

    1993


    Size :

    6 Seiten, 8 Bilder, 1 Tabelle, 3 Quellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Charge-collection mechanisms of AlGaAs/GaAs HBTs

    McMorrow, D. / Melinger, J.S. / Knudson, A.R. et al. | Tema Archive | 1997


    A 4W amplifier for use in automobiles

    Martin, P. | Tema Archive | 1974


    AlGaAs/GaAs superlattice solar cells

    Courel, Maykel | Online Contents | 2013


    Operational amplifier

    MAKIMOTO HIROYUKI / YOSHII YUSUKE / INOUE YUKI | European Patent Office | 2022

    Free access

    Operational amplifier

    MAKIMOTO HIROYUKI / YOSHII YUSUKE / INOUE YUKI | European Patent Office | 2021

    Free access