In situ radiation tests of memory devices
In situ radiation tests of memory devices
- New search for: Brüggemann, M.
- New search for: Fichna, T.
- New search for: Gärtner, M.
- New search for: Gliem, F.
- New search for: Rombeck, F.
- New search for: Brüggemann, M.
- New search for: Fichna, T.
- New search for: Gärtner, M.
- New search for: Gliem, F.
- New search for: Rombeck, F.
The characterization of the SEE-sensitivity of state-of-the-art memory components needs dedicated equipment for in-situ check of the device function by fast running patterns with tailored error detection capability. Design drivers, resulting architecture and functionality of a new test bed are described. It is characterized by a tripartition of the H/W into small head stations for DUT exposure, which are serviced by a microprocessor based fast test unit with embedded H/W for fast pattern generation/verification. A remote control unit provides S/W for archiving and comfortable evaluation of test data. The new test bed is designed for a minimum cycle time of 20 ns, an address space of 256 M and a data path width of 64 bit. The fast test unit with its associated head station can be operated either autonomously or in connection with the remote control for immediate quick look result display.
Document information
In situ radiation tests of memory devices
2000
7 Seiten, 2 Bilder, 4 Tabellen, 3 Quellen
Conference paper
English
Similar titles
In-situ Radiation Tests of Memory Devices
| British Library Conference Proceedings | 2000
| British Library Conference Proceedings | 2005
In Situ Radiography During Tensile Tests
| NTRS | 1994
In Situ Radiography During Tensile Tests
Online Contents | 1994
Shake tests for medical devices
| British Library Online Contents | 1997