Effects of Constant and Variable Accelerations on Crystals Grown onboard Spacecraft by the Method of Directional Crystallization

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Effects of Constant and Variable Accelerations on Crystals Grown onboard Spacecraft by the Method of Directional Crystallization

Feonychev, A. I. / Dolgikh, G. A.

Abstract The effect of constant and time-dependent accelerations (vibrations) on the melt flow and heat and mass transfer in the process of crystal growth by the method of directional crystallization (Bridgman method) onboard spacecraft is numerically investigated. The mathematical formulation of the problem and the technique to solve it numerically are given. The time-averaged flow arising under the action of vibrations in a nonisothermal fluid is investigated. With the help of a rational choice of dimensionless similitude parameters, a generalized dependence on the intensity of melt flow is obtained for the radial segregation of dopants. This dependence is invariant with respect to the type of motive power and thermal boundary conditions in the region of very small velocities of melt flow (“creeping” flow), which are characteristic for microgravity conditions. The allowable levels of constant accelerations, as well as the frequency dependences of tolerable vibrations, are obtained for five typical semiconductor materials: Ge(Ga), GaAs(Te), InSb(Te), Si(P), and Si(B). It is shown that the radial segregation of dopant is much more sensitive to microaccelerations than the axial one. In the region of small velocities, the latter is determined by the duration of the transition regime, which depends on certain physical properties of the melt. New problems that resulted from the investigations performed are discussed.