1.55µm BH-DFB lasers grown by LP-MOCVD

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1.55µm BH-DFB lasers grown by LP-MOCVD

Correc, P. / Landreau, J. / Bouley, J. C. / Razeghi, M. / Blondeau, R. / Kazmierski, K. / Krakowski, M. / De Cremoux, B. / Duchemin, J. P.

Abstract

We describe in this paper the design and characteristics of buried heterostructure (BH) distributed feedback (DFB) lasers grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Typically, threshold current is 30mA for 240µm-long lasers with two cleaved facets and 40mA for lasers with one facet anti-reflection coated. Experimental values are in good agreement with theoretical predictions, based on the laser structure and the coupling coefficient of the diffraction grating. Single longitudinal mode operation is observed for temperatures up to 70°C and output powers up to 6mW. The mode rejection ratio between the DFB mode and the strongest side mode is greater than 30dB.

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Document information

Title :

1.55µm BH-DFB lasers grown by LP-MOCVD

Contributors:

Correc, P. (author) / Landreau, J. (author) / Bouley, J. C. (author) / Razeghi, M. (author) / Blondeau, R. (author) / Kazmierski, K. (author) / Krakowski, M. (author) / De Cremoux, B. (author) / Duchemin, J. P. (author)

Conference:

Fiber Optic Sources and Detectors ; 1985 ; Cannes,France

Published in:

Proc. SPIE ; 0587

Publication date :

1986-07-09

ISBN :

9780892526222

ISSN :

0277-786X

DOI :

https://doi.org/10.1117/12.951192