Polarized-Cathodoluminescence Study Of Stress In GaAs/Si
Polarized-Cathodoluminescence Study Of Stress In GaAs/Si
- New search for: Rich, Daniel H.
- New search for: Ksendzov, Alexander
- New search for: Terhune, Robert W.
- New search for: Grunthaner, Frank J.
- New search for: Wilson, Barbara A.
- New search for: Rich, Daniel H.
- New search for: Ksendzov, Alexander
- New search for: Terhune, Robert W.
- New search for: Grunthaner, Frank J.
- New search for: Wilson, Barbara A.
Report describes experiments in which linearly polarized cathodoluminesce scanning electron microscopy, in both imaging and spectroscopic forms, used to analyze spatial variations in stress tensors in specimens of GaAs/Si. Specimens fabricated by atmospheric-pressure metallo-organic chemical vapor deposition of GaAs to thickness of 4 micrometers on Si substrates. Combination of mismatch between Si and GaAs crystal lattices and differential thermal contraction of materials from deposition temperature (700 degrees C) to room temperature gives rise to stresses in GaAs layer. Experiments conducted to contribute to understanding of effects of these stresses and ramifications thereof for fabrication of electronic devices in GaAs/Si system.
Document information
Polarized-Cathodoluminescence Study Of Stress In GaAs/Si
NASA Tech Briefs ; 17 , 4
1992-04-01
Miscellaneous
No indication
English
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