AIAs Diffusion/Schottky Barrier on GaAs
AIAs Diffusion/Schottky Barrier on GaAs
- New search for: Kaiser, William J.
- New search for: Grunthaner, Frank J.
- New search for: Bell, L. Douglas
- New search for: Hecht, Michael H.
- New search for: Kaiser, William J.
- New search for: Grunthaner, Frank J.
- New search for: Bell, L. Douglas
- New search for: Hecht, Michael H.
Ultrathin epitaxial film of AIAs deposited on GaAs substrate to serve as Schottky barrier and/or as barrier to diffusion. Deposited without interrupting processing vacuum in which substrate deposited and in which any subsequent layers deposited. In new technique, epitaxial film of AIAs deposited directly on GaAs substrate to depth of only two atomic layers - less than 1 nanometer thick. Film thin enough so it does not constitute electronic barrier, but thick enough to act as barrier to interdiffusion of gold and GaAs. Film also used as barrier to interdiffusion of dopants at heterojunctions.
Document information
AIAs Diffusion/Schottky Barrier on GaAs
NASA Tech Briefs ; 14 , 7
1990-07-01
Miscellaneous
No indication
English
Similar titles
High-Performance ITO-AIAs/GaAs based Resonant Cavity Enhanced Schottky Photodiodes
| British Library Conference Proceedings | 1999
Long Wavelength VCSEL with Tunnel Junction and Metamorphic AIAs/GaAs Conductive DBR
| British Library Conference Proceedings | 1999
Conversion Losses In GaAs Schottky-Barrier Diodes
| NTRS | 1988
Generation of microwaves at frequencies above 100 GHz with a GaAs/AIAs superlattice (Invited)
| British Library Conference Proceedings | 2002