Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.


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    Title :

    Oscillating-Crucible Technique for Silicon Growth


    Contributors:
    Daud, T. (author) / Dumas, K. A. (author) / Kim, K. M. (author) / Schwuttke, G. H. (author) / Smetana, P. (author)

    Published in:

    Publication date :

    1984-04-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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