Epitaxial Process for Development for Monolithic Complementary MOS-FET Structure with Oxide Barrier Isolation Final Report, 15 Mar. - 15 Sep. 1965
Epitaxial Process for Development for Monolithic Complementary MOS-FET Structure with Oxide Barrier Isolation Final Report, 15 Mar. - 15 Sep. 1965
- New search for: G. W. Skouson
- New search for: G. W. Skouson
Document information
Epitaxial Process for Development for Monolithic Complementary MOS-FET Structure with Oxide Barrier Isolation Final Report, 15 Mar. - 15 Sep. 1965
1965
29 pages
Report
No indication
English
Manufacturing Processes & Materials Handling , Epitaxial deposition , Etching , N-type semiconductor , P-type semiconductor , Silicon , Barrier , Deposition , Effect , Epitaxy , Fet , Field , Groove , Metal , Mos , N type , Oxide , P type , Semiconductor , Transistor
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