Highly strained GaInAs/GaAs 1.21 /spl mu/m vertical cavity surface emitting laser with single-mode output power of 3 mW

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Highly strained GaInAs/GaAs 1.21 /spl mu/m vertical cavity surface emitting laser with single-mode output power of 3 mW

Highly strained GaInAs/GaAs 1.21 /spl mu/m vertical cavity surface emitting laser with single-mode output power of 3 mW

Kondo, T. / Uchiyama, Y. / Takeda, K. / Matsutani, A. / Miyamoto, T. / Koyama, F.

A highly strained GaInAs/GaAs VCSEL emitting at 1.21 /spl mu/m is demonstrated. The threshold current is 1.3 mA. The maximum single mode output power of 3 mW is achieved. These results indicate that a highly strained 1.2 /spl mu/m range GaInAs VCSEL can be useful for high capacity metro-area networks.

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Title :

Highly strained GaInAs/GaAs 1.21 /spl mu/m vertical cavity surface emitting laser with single-mode output power of 3 mW

Contributors:

Kondo, T. (author) / Uchiyama, Y. (author) / Takeda, K. (author) / Matsutani, A. (author) / Miyamoto, T. (author) / Koyama, F. (author)

Published in:

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004. ; 1 ; 142-143 Vol.1

Publication date :

2004-01-01

Size :

115758 byte

ISBN :

DOI :

https://doi.org/10.1109/LEOS.2004.1363151

Type of media :

Conference paper

Type of material :

Electronic Resource

Language :

English

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