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    Intracavity-contacted VCSELs using asymmetric oxidation for high-speed optical interconnects

    Intracavity-contacted VCSELs using asymmetric oxidation for high-speed optical interconnects


    980nm intracavity-contacted oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) with high modulation bandwidth up to 11GHz have been demonstrated. Asymmetric oxidation was used for reduction of parasitic capacitance and for relaxation of current crowding at oxide aperture rim. The modulation current efficiency factor (MCEF) of 5.6GHz/mA1/2 was also achieved.

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    Title :

    Intracavity-contacted VCSELs using asymmetric oxidation for high-speed optical interconnects

    Contributors:
    Song, Y. M. (author) / Na, B. H. (author) / Lee, Y. T. (author) / Chang, K. S. (author)
    Published in:

    2008 IEEE PhotonicsGlobal@Singapore ; 1-3

    Publication date :

    2008-12-01

    Size :

    320847 byte

    ISBN :

    978-1-4244-2906-6 , 978-1-4244-2905-9 , 978-1-4244-3901-0

    DOI :

    https://doi.org/10.1109/IPGC.2008.4781486

    Type of media :

    Conference paper

    Type of material :

    Electronic Resource

    Language :

    English

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