Resonant tunneling through single InAs quantum dot at room temperature

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Resonant tunneling through single InAs quantum dot at room temperature

Lu, Wei / Li, Tianxin / Xiong, Dayuan / Chen, Pingping / Xia, Changsheng / Liu, Zhaolin / Chen, Xiaoshuang

Transport properties of freestanding InAs quantum dots on GaAs(001) are investigated by means of conductive atomic force microscopy. Resonant tunneling through the hole state of valence-band of single quantum dot is observed at room temperature. The threshold bias for resonant tunneling is related with the dot size, while the amplitude of tunneling current changes little when the height of dot varies from 2 to 10 nm.

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Title :

Resonant tunneling through single InAs quantum dot at room temperature

Contributors:

Lu, Wei (author) / Li, Tianxin (author) / Xiong, Dayuan (author) / Chen, Pingping (author) / Xia, Changsheng (author) / Liu, Zhaolin (author) / Chen, Xiaoshuang (author)

Published in:

2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics ; 529

Publication date :

2006-09-01

Size :

1191488 byte

ISBN :

1-4244-0400-2 , 1-4244-0399-5

DOI :

https://doi.org/10.1109/ICIMW.2006.368737

Type of media :

Conference paper