On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

You are here: Homepage > Search

On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

Hild, K. / Sweeney, S.J. / Lock, D.A. / Wright, S. / Wang, J.-B. / Johnson, S.R. / Zhang, Y.-H.

In spite of the almost ideal variation of the radiative current of 1.3 /spl mu/m GaAsSb/GaAs-based lasers, the threshold current, J/sub th/, is high due to non-radiative recombination accounting for 90% J/sub th/ near room temperature. This also gives rise to low T/sub 0/ values /spl sim/60 K close to room temperature, similar to that for InGaAsP/InP.

Access

Check access

Check availability in my library

Order at Subito €

Export, share and cite

Document information

Title :

On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

Contributors:

Hild, K. (author) / Sweeney, S.J. (author) / Lock, D.A. (author) / Wright, S. (author) / Wang, J.-B. (author) / Johnson, S.R. (author) / Zhang, Y.-H. (author)

Published in:

2005 IEEE LEOS Annual Meeting Conference Proceedings ; 331-332

Publication date :

2005-01-01

Size :

183814 byte

ISBN :

0-7803-9217-5

DOI :

https://doi.org/10.1109/LEOS.2005.1548013

Type of media :

Conference paper