Summary form only given. We present a 1.3-/spl mu/m gain-coupled DFB semiconductor laser with a tapered active stripe. The fabricated laser shows narrow beam divergence of 13-14 degrees and high side-mode suppression ratio (SMSR) of >45 dB. The laser has an InAsP absorptive grating, which is buried between the n-InP buffer layer and the corrugated n-InP substrate.
DFB lasers with tapered active stripe for narrow beam divergence
1998-01-01
253322 byte
Conference paper
Electronic Resource
English
1.3 m tapered active stripe lasers with high slope efficiency and large beam spot-size
British Library Conference Proceedings | 1997
|Narrow Farfield, Low Threshold Tapered Lasers
British Library Conference Proceedings | 1993
|Narrow Stripe Distributed Reflector Lasers with First-Order Vertical Grating
British Library Conference Proceedings | 2002
|