Summary form only given. We present a 1.3-/spl mu/m gain-coupled DFB semiconductor laser with a tapered active stripe. The fabricated laser shows narrow beam divergence of 13-14 degrees and high side-mode suppression ratio (SMSR) of >45 dB. The laser has an InAsP absorptive grating, which is buried between the n-InP buffer layer and the corrugated n-InP substrate.


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    Title :

    DFB lasers with tapered active stripe for narrow beam divergence


    Contributors:
    Kito, M. (author) / Inaba, Y. (author) / Chino, T. (author) / Ishino, M. (author) / Matsui, Y. (author)


    Publication date :

    1998-01-01


    Size :

    253322 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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