Magnetic field dependence of THz radiation from InSb surface
Magnetic field dependence of THz radiation from InSb surface
Summary form only given. Terahertz radiation from semiconductor surfaces can be strongly affected by a magnetic field. This was first reported by Zhang et al. (1993) for [100] GaAs. Recently, THz radiation from InAs in strong magnetic fields was observed by Sarukura et al. (1999). The power was more than one order of magnitude larger at the highest magnetic field (1.7 T) than that at zero magnetic field. However, there has been no clear experiment to identify the mechanism to increase the THz radiation power in the magnetic field. It is expected that the THz radiation from InSb show sensitive dependence of the THz emission on the magnetic field due to the extraordinary small effective electron mass and the very large electron mobility. We investigated the THz radiation from InSb surface in magnetic fields using a time-resolved detection system.
Document information
Magnetic field dependence of THz radiation from InSb surface
1999-01-01
282099 byte
Conference paper
Electronic Resource
English
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