1.3 /spl mu/m-range GaInNAsSb VCSELs with high temperature operation

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1.3 /spl mu/m-range GaInNAsSb VCSELs with high temperature operation

Ikenaga, Y. / Shimizu, H. / Setiagung, C. / Ariga, M. / Sato, T. / Hama, T. / Kumada, K. / Haga, Y. / Iwai, N. / Kasukawa, A.

Abstract

1.3 /spl mu/m GaInNAsSb based VCSELs with improved active region structure are reported. By changing the active region, maximum lasing temperature of over 105/spl deg/C and single mode output power at 85/spl deg/C of 0.35 mW were obtained.

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Title :

1.3 /spl mu/m-range GaInNAsSb VCSELs with high temperature operation

Contributors:

Ikenaga, Y. (author) / Shimizu, H. (author) / Setiagung, C. (author) / Ariga, M. (author) / Sato, T. (author) / Hama, T. (author) / Kumada, K. (author) / Haga, Y. (author) / Iwai, N. (author) / Kasukawa, A. (author)

Published in:

CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671) ; 2 ; 494 vol.2

Publication date :

2003-01-01

Size :

84218 byte

ISBN :

0-7803-7766-4

DOI :

https://doi.org/10.1109/CLEOPR.2003.1277042

Type of media :

Conference paper