Optical calibration of electron concentrations in heavily doped n-GaAs films
Optical calibration of electron concentrations in heavily doped n-GaAs films
- New search for: Stiens, J.
- New search for: Kotov, V.
- New search for: Shkerdin, G.
- New search for: Borghs, G.
- New search for: Vounckx, R.
- New search for: Stiens, J.
- New search for: Kotov, V.
- New search for: Shkerdin, G.
- New search for: Borghs, G.
- New search for: Vounckx, R.
An accurate knowledge of carrier concentrations is important for many semiconductor devices. A variety of optical and electrical measurement techniques has been developed. In this paper we discuss and compare different linear reflection measurement techniques to calibrate the electron concentration N in thin n-GaAs layers in the range between 1 and 20 /spl times/ 10/sup 18/ with accuracies down to 1-2 % by exploiting optical plasma resonance effects.
Document information
Optical calibration of electron concentrations in heavily doped n-GaAs films
2002-01-01
260647 byte
Conference paper
Electronic Resource
English
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