By using Sb monomer to deposit a GaAsSb layer, we demonstrate a high quality low-threshold GaAsSb/GaAs double quantum well laser diode. The samples were grown on n-GaAs(100) substrates using VG V80MKII solid-source molecular beam epitaxy. Besides the Ga beam used for the group-III source, Sb/sub 1/ and As/sub 4/ beams were adopted for group-V sources.
Growth and characterization of low-threshold 1.3 /spl mu/m GaAsSb quantum well laser
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 552-553 vol.2
2002-01-01
91945 byte
Conference paper
Electronic Resource
English
WX2 Growth and Characterization of Low-Threshold 1.3 mum GaAsSb Quantum Well Laser
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