By using Sb monomer to deposit a GaAsSb layer, we demonstrate a high quality low-threshold GaAsSb/GaAs double quantum well laser diode. The samples were grown on n-GaAs(100) substrates using VG V80MKII solid-source molecular beam epitaxy. Besides the Ga beam used for the group-III source, Sb/sub 1/ and As/sub 4/ beams were adopted for group-V sources.


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    Title :

    Growth and characterization of low-threshold 1.3 /spl mu/m GaAsSb quantum well laser


    Contributors:


    Publication date :

    2002-01-01


    Size :

    91945 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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