Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

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Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

Hsiang-Chen Wang, / Cheng-Yeh Tsai, / Yung-Chen Cheng, / En-Chiang Lin, / Shih-Wei Feng, / Yang, C.C. / Kung-Jen Ma, / Cheng-Ta Kuo, / Jian-Shihn Tsang,

Abstract

Temperature-dependent pump-probe measurements were conducted for observing the process of carrier relaxation into localized states of quantum dots, which were formed through indium aggregation in InGaN/GaN quantum well structures of various parameters.

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Title :

Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

Contributors:

Hsiang-Chen Wang, (author) / Cheng-Yeh Tsai, (author) / Yung-Chen Cheng, (author) / En-Chiang Lin, (author) / Shih-Wei Feng, (author) / Yang, C.C. (author) / Kung-Jen Ma, (author) / Cheng-Ta Kuo, (author) / Jian-Shihn Tsang, (author)

Published in:

CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671) ; 1 ; 82 Vol.1

Publication date :

2003-01-01

Size :

76611 byte

ISBN :

0-7803-7766-4

DOI :

https://doi.org/10.1109/CLEOPR.2003.1274552

Type of media :

Conference paper