Etch-depth dependence of laser diodes using angular filtering by total reflection

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Etch-depth dependence of laser diodes using angular filtering by total reflection

Rogg, J. / Boucke, K. / Kelemen, M.T. / Rinner, F. / Pletschen, W. / Kiefer, R. / Walther, M. / Mikulla, M. / Poprawe, R. / Weimann, G.

Abstract

High-brightness high-power laser diodes are gaining importance in a wide variety of applications. For direct use as a replacement for solid-state lasers in particular, laser diodes with high output power and good beam quality are necessary. Recently, we presented the realization of a new resonator concept for high brightness laser diodes, the so-called "Z-laser" (Rogg et al, Proc. SPIE vol. 4287, pp. 195-201, 2001). In this paper, we present data on the optimization of the internal reflecting boundaries of these devices.

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Document information

Title :

Etch-depth dependence of laser diodes using angular filtering by total reflection

Contributors:

Rogg, J. (author) / Boucke, K. (author) / Kelemen, M.T. (author) / Rinner, F. (author) / Pletschen, W. (author) / Kiefer, R. (author) / Walther, M. (author) / Mikulla, M. (author) / Poprawe, R. (author) / Weimann, G. (author)

Published in:

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) ; 1 ; 141-142 vol.1

Publication date :

2001-01-01

Size :

186639 byte

ISBN :

0-7803-7105-4

ISSN :

1092-8081

DOI :

https://doi.org/10.1109/LEOS.2001.969212