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    InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C

    InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C


    1.55 /spl mu/m strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90/spl deg/C they support a direct modulation with 12.5 GHz.

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    Title :

    InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C

    Contributors:
    Mohrle, M. (author) / Morl, L. (author) / Sigmund, A. (author) / Suna, A. (author) / Reier, F. (author) / Roehle, H. (author)
    Published in:

    2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. ; 10-11

    Publication date :

    2004-01-01

    Size :

    199934 byte

    ISBN :

    0-7803-8627-2

    DOI :

    https://doi.org/10.1109/ISLC.2004.1382728

    Type of media :

    Conference paper

    Type of material :

    Electronic Resource

    Language :

    English

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