Design and fabrication of high power and broad-band GaInAsP/InP strained quantum well superluminescent diodes with tapered active region
Design and fabrication of high power and broad-band GaInAsP/InP strained quantum well superluminescent diodes with tapered active region
- New search for: Yamatoya, T.
- New search for: Mori, S.
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- New search for: Iga, K.
- New search for: Yamatoya, T.
- New search for: Mori, S.
- New search for: Koyama, F.
- New search for: Iga, K.
High power and broadband superluminescent diodes (SLDs) would be useful for various optical sensing applications and for spectrum-sliced multi-wavelength light sources. We proposed and developed SLDs with a tapered active region. We present the design and fabrication of GaInAsP-InP strained QW SLDs with an optimized taper structure. Also, broad-band emission has been obtained by using chirped QW structures.
Document information
Design and fabrication of high power and broad-band GaInAsP/InP strained quantum well superluminescent diodes with tapered active region
1999-01-01
147957 byte
Conference paper
Electronic Resource
English
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