Very low threshold current GaInNAs quantum well lasers operating at 1.30 /spl mu/m

You are here: Homepage > Search

Very low threshold current GaInNAs quantum well lasers operating at 1.30 /spl mu/m

Katsuyama, T. / Yamada, T. / Iguchi, Y. / Takagishi, S. / Murata, M. / Hashimoto, J. / Ishidal, A.

Long-wavelength GaInNAs lasers grown on GaAs are very attractive devices for the application of optical communication. Recently, excellent high temperature characteristics and low threshold current density operation have been reported. However, the threshold current is still not low enough for practical applications at 1.3 /spl mu/m region. This is mainly due to the difficulty of forming an effective current confinement structure. In this paper, we present successful operation of GalnP buried heterostructure devices emitting over 1.3 /spl mu/m with very low threshold current ever reported. Organometallic vapor phase epitaxy (OMVPE) selective buried growth was used for the fabrication of the device.

Access

Check access

Check availability in my library

Order at Subito €

Export, share and cite

Document information

Title :

Very low threshold current GaInNAs quantum well lasers operating at 1.30 /spl mu/m

Contributors:

Katsuyama, T. (author) / Yamada, T. (author) / Iguchi, Y. (author) / Takagishi, S. (author) / Murata, M. (author) / Hashimoto, J. (author) / Ishidal, A. (author)

Published in:

Conference on Lasers and Electro-Optics, 2003. CLEO '03. ; 4 pp.

Publication date :

2003-01-01

Size :

381989 byte

ISBN :

1-55752-748-2

Type of media :

Conference paper

Type of material :

Electronic Resource