We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence (PL), PL excitation, time-resolved PL, and optical pumping. All the epilayers were grown by metalorganic chemical vapor deposition (MOCVD). Recombination in the GaN thin films was found to be affected by non-radiative processes in the temperature range of 10 - 300 K.


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    Title :

    Comparison of spontaneous and stimulated emission from UV-blue photonic materials


    Contributors:
    Little, B.D. (author) / Yong-Hoon Cho, (author) / Schmidt, T.J. (author) / Gainer, G.H. (author) / Lam, J.B. (author) / Song, J.J. (author) / Yang, W. (author) / Keller, S. (author) / Mishra, U.K. (author) / DenBaars, S.P. (author)


    Publication date :

    1999-01-01


    Size :

    122030 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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