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    Carrier distribution and self heating in quantum dot and quantum well lasers

    Smowton, P.M. / Pearce, E.J. / Hopkinson, M. | IEEE | 2003

    Rate-equation modeling of spectrum and dynamic properties of quantum-dot lasers

    Chen, H.-T. / Hsieh, W.-H. / Mao, M.-H. | IEEE | 2003
    The influences of the material and structural parameters on the static and dynamic characteristics of quantum-dot lasers are analyzed using ...

    Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers

    Stiff-Roberts, A.D. / Chakrabarti, S. / Bhattacharya, P. et al. | IEEE | 2003

    InAs quantum dots on InP(100) grown by metalorganic vapor-phase epitaxy

    Kawaguchi, K. / Ekawa, M. / Kuramata, A. et al. | IEEE | 2003

    Formation and characteristics of wide band gap II-VI semiconductor quantum dots

    Fan, X.W. / Shan, C.X. / Yang, Y. et al. | IEEE | 2003
    CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition ...

    Quantum dot structures and their optical properties of a high-indium InGaN film

    Shih-Wei Feng, / En-Chiang Lin, / Yung-Chen Cheng, et al. | IEEE | 2003
    to the quantum dot-like cluster size reduction through spinodal decomposition at thermal annealing. ...

    Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers

    Rafailov, E.U. / White, S.J. / Lagatsky, A.A. et al. | IEEE | 2003

    Microdisks with quantum dot active regions lasing near 1300 nm at room-temperature

    Yang, T. / Cao, J. / Lee, P. et al. | IEEE | 2003
    Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped ...

    External feedback effects on a quantum dot laterally loss coupled distributed feedback laser

    Su, H. / Malloy, K.J. / Lester, L.F. et al. | IEEE | 2003
    The critical external feedback ratio for coherence collapse in a quantum dot laterally loss coupled distributed feedback (QD LLC DFB) laser ...

    Spectral dependence of modal gain and linewidth enhancement factor in InAs quantum dot lasers

    Ukhanov, A.A. / Stintz, A. / Eliseev, P.G. et al. | IEEE | 2003

    Colloidal chemical synthesis and nonlinear optical properties of cadmium chalcogenide semiconductor nanocrystal quantum dots

    Seo, J.T. / Pompey, C. / Yang, Q. et al. | IEEE | 2003
    The nonlinear refraction and the nonlinear figure of merit of CdTe nanocrystal quantum dots in toluene were estimated to be /spl sim/-1/spl ...

    The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

    Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003
    The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

    1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

    Mao, M.-H. / Wu, T.-Y. / Chang, F.-Y. et al. | IEEE | 2003
    In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation ...

    Spontaneous emission and optical gain due to quantum-well to quantum-dot photon-assisted tunneling

    Chuang, S.L. / Littlewood, P. / Walter, G. et al. | IEEE | 2003

    Electron and exciton-phonon interaction in quantum dots and wires: the peculiarities of Raman spectrum

    Tkach, M.V. / Zharkoy, V.P. / Voitsekhivska, O.M. et al. | IEEE | 2003
    symmetry of quantum dot and cylindrical quantum wire in the Raman spectra one cannot see the interface phonon repeatings. There are only the ...

    Modification of spontaneous emission rate in strained gan quantum dots by resonant surface plasmon interaction

    Neogi, A. / Morkoc, H. | IEEE | 2003

    Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

    Marko, I.P. / Andreev, A.D. / Adams, A.R. et al. | IEEE | 2003
    The Auger recombination in 1.3/spl mu/m InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical ...

    The characteristics of 3-stacked InGaAs/GaAs quantum dot lasers grown by atomic layer molecular beam epitaxy

    Heo, D. / Song, J.D. / Choi, W.J. et al. | IEEE | 2003

    Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

    Xiaodong Mu, / Yujie J. Ding, / Zhiming Wang, et al. | IEEE | 2003

    Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

    Wen-Hao Chang, / Wen-Yen Cheng, / An-Tai Chou, et al. | IEEE | 2003
    Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to ...

    Measurement of optical phase shift in inas quantum dot waveguide by a two color pump-probe ellipsometory

    Kanamoto, K. / Nakamura, R. / Nakamura, Y. et al. | IEEE | 2003

    Time-resolved optical nonlinearity measurement by a two color pump-probe ellipsometry in InAs quantum dot waveguide

    Kanamoto, K. / Nakamura, H. / Nakamura, Y. et al. | IEEE | 2003
    We have developed a two color pump-probe ellipsometry for the measurement of the optical nonlinear phase shift in a waveguide with quantum ...

    Narrow ridge-waveguide multi-layer InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range

    Lin, G. / Chen, I.F. / Lay, F.J. et al. | IEEE | 2003
    We have demonstrated high-performance multi-layer (2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m with narrow ridge ...

    Modulation characteristics of In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot gain-coupled distributed feedback lasers

    Fathpour, S. / Bhattacharya, P. / Pradhan, S. et al. | IEEE | 2003
    This paper presents the high-speed modulation characteristics of In/sub 0.4/Ga/sub 0.60/As/GaAs self-organized quantum dot gain-coupled DFB ...

    Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

    Hsiang-Chen Wang, / Cheng-Yeh Tsai, / Yung-Chen Cheng, et al. | IEEE | 2003
    quantum dots, which were formed through indium aggregation in InGaN/GaN quantum well structures of various parameters. ...

    1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design

    Deubert, S. / Krebs, R. / Reithmaier, J.P. et al. | IEEE | 2003
    This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design ...

    CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

    Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | IEEE | 2003
    We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic ...

    Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

    Tatebayashi, J. / Hatori, N. / Ebe, H. et al. | IEEE | 2003
    This study demonstrates lasing action with very low threshold current (6.7 mA) of InAs/GaAs quantum dots at the wavelength of 1.18 /spl mu ...

    MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3 /spl mu/m

    Suemune, I. / Uesugi, K. / Sasikala, G. et al. | IEEE | 2003
    In this paper, new challenges on the III-V-N based quantum wells (QWs) and quantum dots (QDs) prepared with metalorganic molecular-beam ...

    Study of the photo-physical behavior of ZnS-capped CdSe quantum dots with application to multi-photon microscopy

    Barzda, V. / Aus der Au, J. / Squier, J.A. et al. | IEEE | 2003

    1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers

    Balakrishnan, G. / Dawson, L.R. / Huffaker, D.L. et al. | IEEE | 2003
    We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state ...

    PbS quantum-dot-doped glass as saturable absorber for passive mode-locking of a Cr/sup 4+/:YAG laser

    Lagatsky, A.A. / Leburn, C.G. / Brown, C.T.A. et al. | IEEE | 2003

    Normal incidence InAs/ InGaAs quantum dots-in-a-well photodetector spanning the 8-12 /spl mu/m atmospheric window

    Raghavan, S. / Forman, D. / Hill, P. et al. | IEEE | 2003

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures

    Pearce, E.J. / Smowton, P.M. / Summers, H.D. et al. | IEEE | 2003
    Carrier distributions in DWELL (quantum dot within a quantum well) and standard quantum dot (QD) lasers are similar but radiative ...

    Novel approach of performing elementary quantum operations using spatial phase

    Mishima, K. / Hayashi, M. / Lin, S.H. | IEEE | 2003
    We propose a new idea of generating and controlling quantum coherences among semiconductor quantum dots by using the spatial phase of one ...

    Theoretical modeling and experimental characterization of InAs/lnGaAs dots in a well detector

    Amtout, A. / Raghavan, S. / Rotella, P. et al. | IEEE | 2003
    In this paper a InGaAs/GaAs quantum dot in a well intersubband detectors were grown by molecular beam epitaxy (MBE). The spectral response ...

    Femtosecond photonic devices using nano-structure materials for ultrafast optical communications

    Wada, O. | IEEE | 2003
    progresses in various femtosecond photonic devices including quantum well intersubband transition switches and quantum dot optical amplifier devices. ...

    Quantum- and nano-structure semiconductors for ultrafast photonic devices

    Wada, O. | IEEE | 2003
    all-optical switches based on intersubband transition in quantum wells (QWs) and ultrafast quantum dot semiconductor optical amplifiers (QD ...

    Single photon sources based on InP and CdSe QDs

    Aichele, T. / Zwiller, V. / Benson, O. | IEEE | 2003
    In this paper, we report on recent experimental realizations of single photon sources based on InP and CdSe quantum dots. In order to ...

    Electron and exciton spectra in opened nanoheterosystems

    Tkach, M.V. / Holovatsky, V.A. / Berezovs'ky, Y.M. et al. | IEEE | 2003
    The theory of electron, hole and exciton spectra in the opened complicated spherical quantum dots (QD) in the medium is developed in the ...

    2-D photonic crystal microcavities

    Scherer, A. / Yoshie, T. / Loncar, M. et al. | IEEE | 2003
    We have recently developed photonic crystal nanocavities and lasers from both InGaAsP quantum well and InGaAs/GaAs quantum dot materials ...

    Long wavelength laser diodes based on GaAs diodes based on GaAs

    Chi, J. / Wang, J.S. / Liu, Y.S. | IEEE | 2003
    fabricated with epitaxial films of MBE grown InAs/InGaAs quantum dots have shown to be capable of ultra low threshold current operation near 1 mA ...

    Self-organized iron silicide nano dots on silicon [001] substrate

    Chou, L.J. / Chuen, Y.L. | IEEE | 2003
    disilicide quantum dots have been successfully grown by a UHV electron gun evaporation system with vacuum level better that 10/sup -9/ torr, using ...

    New laser and detector structures for mid-infrared

    Joullie, A. / Christol, P. / Rodriguez, J.B. et al. | IEEE | 2003
    systems based on type-II InAs/GaSb superlattices or InSb/GaSb quantum dots. ...

    Temperature characteristics of long-wavelength quantum dash lasers on [110] and [111]A InP

    Zuo, Z. / Wang, R.H. / Newell, T.C. et al. | IEEE | 2003
    This study reports on the fabrication and lasing characteristics of InAs quantum dot (QD) lasers on GaAs substrates grown by metalorganic ...

    Diode-pumped Nd:YVO/sub 4/ 1.3 /spl mu/m laser passively Q-switched with the PbS-doped glass

    Savitski, V.G. / Malyarevich, A.M. / Yumashev, K.V. et al. | IEEE | 2003
    In this paper, we present a silicate glass doped with PbS-quantum dots (QDs) as new saturable absorber (SA) for Q-switching of a diode ...

    Conference on Lasers and Electro-Optics (CLEO) (IEEE Cat. No.CH37419-TBR)

    IEEE | 2003
    solitons; quantum dot lasers; fusion laser engineering; photonic crystal lasers; modulation formats and clock recovery; optical MEMS; fluorescence ...

    Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs

    Liang, H. / Yu, L.S. / Qi, Y.D. et al. | IEEE | 2003
    model of quantum dot clusters in the InGaN/GaN pseudo-quantum wells, with a small potential barrier at the boundary of the quantum dots. ...

    CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671)

    IEEE | 2003
    ; quantum dot physics; waveguide devices; femtosecond laser processing; microfabrication and microsystem; organic light emitting diode; optical ...

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