We have demonstrated high-performance multi-layer (2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m with narrow ridge-waveguide structure. Simultaneous ground-state and excited-state losing emissions well above threshold was observed and their spectral evolution was also investigated.


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    Titel :

    Narrow ridge-waveguide multi-layer InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range


    Beteiligte:
    Lin, G. (Autor:in) / Chen, I.F. (Autor:in) / Lay, F.J. (Autor:in) / Chi, J.Y. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    75162 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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