Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

Sie sind hier: Homepage > Suche

Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

Marko, I.P. / Andreev, A.D. / Adams, A.R. / Krebs, R. / Reithmaier, J.P. / Forchel, A.

The Auger recombination in 1.3/spl mu/m InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical model was used which includes strain, piezoelectric field and electronic structure calculated in the QDs of truncated pyramid shape. It was found that the radiative current increases with pressure, but the Auger recombination current decreases with pressure and is the dominant recombination path at room temperature in 1.3/spl mu/m QD lasers.

Zugriff

Zugriff prüfen

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Exportieren, teilen und zitieren

Dokumentinformationen

Titel :

Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

Beteiligte:

Marko, I.P. (Autor:in) / Andreev, A.D. (Autor:in) / Adams, A.R. (Autor:in) / Krebs, R. (Autor:in) / Reithmaier, J.P. (Autor:in) / Forchel, A. (Autor:in)

Erschienen in:

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) ; 175

Erscheinungsdatum :

2003-01-01

Format / Umfang :

81249 byte

ISBN :

0-7803-7734-6

DOI :

https://doi.org/10.1109/CLEOE.2003.1312236

Medientyp :

Aufsatz (Konferenz)