In this paper a InGaAs/GaAs quantum dot in a well intersubband detectors were grown by molecular beam epitaxy (MBE). The spectral response of the detector is compared with the prediction of our theoretical model.
Theoretical modeling and experimental characterization of InAs/lnGaAs dots in a well detector
2003-01-01
186359 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Theoretical Modeling and Experimental Characterization of InAs/InGaAs Dots in a Well Detector
British Library Conference Proceedings | 2003
|A simple wide-spectral-range lnGaAs photodiode
IEEE | 1997
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