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    Long wavelength laser diodes based on GaAs diodes based on GaAs

    Long wavelength laser diodes based on GaAs diodes based on GaAs


    Recent data on two approaches for 1.3 /spl mu/ laser operation on GaAs substrates, InAs QDs and InGaNAs QWs, are presented. Lasers fabricated with epitaxial films of MBE grown InAs/InGaAs quantum dots have shown to be capable of ultra low threshold current operation near 1 mA while reaching several mW power level. MOCVD grown InGaNAs quantum wells showed low threshold density of less than 400 A/cm/sup 2/.

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    Titel :

    Long wavelength laser diodes based on GaAs diodes based on GaAs

    Beteiligte:
    Chi, J. (Autor:in) / Wang, J.S. (Autor:in) / Liu, Y.S. (Autor:in)
    Erschienen in:

    Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701) ; 7-10

    Erscheinungsdatum :

    2003-01-01

    Format / Umfang :

    249805 byte

    ISBN :

    0-7803-7887-3

    DOI :

    https://doi.org/10.1109/COS.2003.1278152

    Medientyp :

    Aufsatz (Konferenz)

    Format :

    Elektronische Ressource

    Sprache :

    Englisch

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