Self-organized iron silicide nano dots on silicon [001] substrate
Self-organized iron silicide nano dots on silicon [001] substrate
- Neue Suche nach: Chou, L.J.
- Neue Suche nach: Chuen, Y.L.
- Neue Suche nach: Chou, L.J.
- Neue Suche nach: Chuen, Y.L.
This paper studies the self-organized iron silicide nano dots on silicon [001] substrate. In the experiment, self-aligned (1D) iron disilicide quantum dots have been successfully grown by a UHV electron gun evaporation system with vacuum level better that 10/sup -9/ torr, using either Si/sub x/Ge/sub 1-x/ or strained Si as a substrate. JEOL 2010 and 4000EX transmission electron microscopes, operating at 200 and 400 KeV, were used to study the microstructures.
Dokumentinformationen
Self-organized iron silicide nano dots on silicon [001] substrate
2003-01-01
104030 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Ähnliche Titel
Self-organized iron silicide nano dots on silicon (001) substrate
| British Library Conference Proceedings | 2003
Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD
| British Library Online Contents | 1998
Growing Cobalt Silicide Columns In Silicon
| NTRS | 1991
Mid-Infrared Intraband Transitions in Self-Organized InAs/GaAs Quantum Dots
| British Library Conference Proceedings | 1997
Fabrication and characterization of Si dots prepared by self-organized recrystallization
| British Library Conference Proceedings | 1997