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Phonon-assisted transitions in single self-assembled InGaAs quantum dots are investigated by photoluminescence (PL) and PL excitation (PLE ...

Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA's

Lester, L.F. / Gray, A.L. / Zhang, L. et al. | IEEE | 2003

versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback ...

Rate-equation modeling of spectrum and dynamic properties of quantum-dot lasers

Chen, H.-T. / Hsieh, W.-H. / Mao, M.-H. | IEEE | 2003

The influences of the material and structural parameters on the static and dynamic characteristics of quantum-dot lasers are analyzed using ...

Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers

Stiff-Roberts, A.D. / Chakrabarti, S. / Bhattacharya, P. et al. | IEEE | 2003

High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector

Stiff-Roberts, A.D. / Chakrabarti, S. / Kennerly, S. et al. | IEEE | 2003

Carrier distribution and self heating in quantum dot and quantum well lasers

Smowton, P.M. / Pearce, E.J. / Hopkinson, M. | IEEE | 2003

Formation and characteristics of wide band gap II-VI semiconductor quantum dots

Fan, X.W. / Shan, C.X. / Yang, Y. et al. | IEEE | 2003

CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition ...

InAs quantum dots on InP(100) grown by metalorganic vapor-phase epitaxy

Kawaguchi, K. / Ekawa, M. / Kuramata, A. et al. | IEEE | 2003

Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers

Rafailov, E.U. / White, S.J. / Lagatsky, A.A. et al. | IEEE | 2003

Microdisks with quantum dot active regions lasing near 1300 nm at room-temperature

Yang, T. / Cao, J. / Lee, P. et al. | IEEE | 2003

Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped ...

External feedback effects on a quantum dot laterally loss coupled distributed feedback laser

Su, H. / Malloy, K.J. / Lester, L.F. et al. | IEEE | 2003

The critical external feedback ratio for coherence collapse in a quantum dot laterally loss coupled distributed feedback (QD LLC DFB) laser ...

Quantum dot structures and their optical properties of a high-indium InGaN film

Shih-Wei Feng, / En-Chiang Lin, / Yung-Chen Cheng, et al. | IEEE | 2003

to the quantum dot-like cluster size reduction through spinodal decomposition at thermal annealing. ...

Spectral dependence of modal gain and linewidth enhancement factor in InAs quantum dot lasers

Ukhanov, A.A. / Stintz, A. / Eliseev, P.G. et al. | IEEE | 2003

Colloidal chemical synthesis and nonlinear optical properties of cadmium chalcogenide semiconductor nanocrystal quantum dots

Seo, J.T. / Pompey, C. / Yang, Q. et al. | IEEE | 2003

The nonlinear refraction and the nonlinear figure of merit of CdTe nanocrystal quantum dots in toluene were estimated to be /spl sim/-1/spl ...

The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003

The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

Mao, M.-H. / Wu, T.-Y. / Chang, F.-Y. et al. | IEEE | 2003

In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation ...

Spontaneous emission and optical gain due to quantum-well to quantum-dot photon-assisted tunneling

Chuang, S.L. / Littlewood, P. / Walter, G. et al. | IEEE | 2003

Modification of spontaneous emission rate in strained gan quantum dots by resonant surface plasmon interaction

Neogi, A. / Morkoc, H. | IEEE | 2003

Electron and exciton-phonon interaction in quantum dots and wires: the peculiarities of Raman spectrum

Tkach, M.V. / Zharkoy, V.P. / Voitsekhivska, O.M. et al. | IEEE | 2003

symmetry of quantum dot and cylindrical quantum wire in the Raman spectra one cannot see the interface phonon repeatings. There are only the ...

Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

Marko, I.P. / Andreev, A.D. / Adams, A.R. et al. | IEEE | 2003

The Auger recombination in 1.3/spl mu/m InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical ...

Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

Xiaodong Mu, / Yujie J. Ding, / Zhiming Wang, et al. | IEEE | 2003

Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

Wen-Hao Chang, / Wen-Yen Cheng, / An-Tai Chou, et al. | IEEE | 2003

Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to ...

Time-resolved optical nonlinearity measurement by a two color pump-probe ellipsometry in InAs quantum dot waveguide

Kanamoto, K. / Nakamura, H. / Nakamura, Y. et al. | IEEE | 2003

We have developed a two color pump-probe ellipsometry for the measurement of the optical nonlinear phase shift in a waveguide with quantum ...

Measurement of optical phase shift in inas quantum dot waveguide by a two color pump-probe ellipsometory

Kanamoto, K. / Nakamura, R. / Nakamura, Y. et al. | IEEE | 2003

The characteristics of 3-stacked InGaAs/GaAs quantum dot lasers grown by atomic layer molecular beam epitaxy

Heo, D. / Song, J.D. / Choi, W.J. et al. | IEEE | 2003

Narrow ridge-waveguide multi-layer InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range

Lin, G. / Chen, I.F. / Lay, F.J. et al. | IEEE | 2003

We have demonstrated high-performance multi-layer (2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m with narrow ridge ...

Modulation characteristics of In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot gain-coupled distributed feedback lasers

Fathpour, S. / Bhattacharya, P. / Pradhan, S. et al. | IEEE | 2003

This paper presents the high-speed modulation characteristics of In/sub 0.4/Ga/sub 0.60/As/GaAs self-organized quantum dot gain-coupled DFB ...

1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design

Deubert, S. / Krebs, R. / Reithmaier, J.P. et al. | IEEE | 2003

This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design ...

CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

Tatebayashi, J. / Kakuma, H. / Hatori, N. et al. | IEEE | 2003

We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic ...

Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

Hsiang-Chen Wang, / Cheng-Yeh Tsai, / Yung-Chen Cheng, et al. | IEEE | 2003

quantum dots, which were formed through indium aggregation in InGaN/GaN quantum well structures of various parameters. ...

PbS quantum-dot-doped glass as saturable absorber for passive mode-locking of a Cr/sup 4+/:YAG laser

Lagatsky, A.A. / Leburn, C.G. / Brown, C.T.A. et al. | IEEE | 2003

Study of the photo-physical behavior of ZnS-capped CdSe quantum dots with application to multi-photon microscopy

Barzda, V. / Aus der Au, J. / Squier, J.A. et al. | IEEE | 2003

1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers

Balakrishnan, G. / Dawson, L.R. / Huffaker, D.L. et al. | IEEE | 2003

We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state ...

Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Tatebayashi, J. / Hatori, N. / Ebe, H. et al. | IEEE | 2003

This study demonstrates lasing action with very low threshold current (6.7 mA) of InAs/GaAs quantum dots at the wavelength of 1.18 /spl mu ...

MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3 /spl mu/m

Suemune, I. / Uesugi, K. / Sasikala, G. et al. | IEEE | 2003

In this paper, new challenges on the III-V-N based quantum wells (QWs) and quantum dots (QDs) prepared with metalorganic molecular-beam ...

Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003

In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

Normal incidence InAs/ InGaAs quantum dots-in-a-well photodetector spanning the 8-12 /spl mu/m atmospheric window

Raghavan, S. / Forman, D. / Hill, P. et al. | IEEE | 2003

A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures

Pearce, E.J. / Smowton, P.M. / Summers, H.D. et al. | IEEE | 2003

Carrier distributions in DWELL (quantum dot within a quantum well) and standard quantum dot (QD) lasers are similar but radiative ...

Novel approach of performing elementary quantum operations using spatial phase

Mishima, K. / Hayashi, M. / Lin, S.H. | IEEE | 2003

We propose a new idea of generating and controlling quantum coherences among semiconductor quantum dots by using the spatial phase of one ...

Theoretical modeling and experimental characterization of InAs/lnGaAs dots in a well detector

Amtout, A. / Raghavan, S. / Rotella, P. et al. | IEEE | 2003

In this paper a InGaAs/GaAs quantum dot in a well intersubband detectors were grown by molecular beam epitaxy (MBE). The spectral response ...

Femtosecond photonic devices using nano-structure materials for ultrafast optical communications

Wada, O. | IEEE | 2003

progresses in various femtosecond photonic devices including quantum well intersubband transition switches and quantum dot optical amplifier devices. ...

Quantum- and nano-structure semiconductors for ultrafast photonic devices

Wada, O. | IEEE | 2003

all-optical switches based on intersubband transition in quantum wells (QWs) and ultrafast quantum dot semiconductor optical amplifiers (QD ...

Single photon sources based on InP and CdSe QDs

Aichele, T. / Zwiller, V. / Benson, O. | IEEE | 2003

In this paper, we report on recent experimental realizations of single photon sources based on InP and CdSe quantum dots. In order to ...

Electron and exciton spectra in opened nanoheterosystems

Tkach, M.V. / Holovatsky, V.A. / Berezovs'ky, Y.M. et al. | IEEE | 2003

The theory of electron, hole and exciton spectra in the opened complicated spherical quantum dots (QD) in the medium is developed in the ...

2-D photonic crystal microcavities

Scherer, A. / Yoshie, T. / Loncar, M. et al. | IEEE | 2003

We have recently developed photonic crystal nanocavities and lasers from both InGaAsP quantum well and InGaAs/GaAs quantum dot materials ...

Long wavelength laser diodes based on GaAs diodes based on GaAs

Chi, J. / Wang, J.S. / Liu, Y.S. | IEEE | 2003

fabricated with epitaxial films of MBE grown InAs/InGaAs quantum dots have shown to be capable of ultra low threshold current operation near 1 mA ...

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