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    Formation of Landau levels in CdSSe quantum dots by a magnetic field

    Yumoto, J. / Uesugi, N. | IEEE | 1995

    Near-field optical properties of CaAs quantum dot structures measured by photon scanning tunnelling

    Toda, Y. / Kourogi, M. / Arakawa, Y. et al. | IEEE | 1995

    Single quantum dot spectroscopy

    Gammon, D. / Snow, E.S. / Shanabrook, B.V. et al. | IEEE | 1996
    Semiconductor quantum dots localize the exciton in all three spatial dimensions and completely quantize the exciton energy spectrum. In the ...

    To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge

    Asryan, L.V. / Suris, R.A. | IEEE | 1996
    An extension of the theory of quantum dot (QD) lasers is carried out which takes proper account of QD charge. The inclusion of the charge ...

    Low-temperature near-field spectroscopy of quantum dots

    Arakawa, Y. / Toda, Y. / Nagamune, Y. et al. | IEEE | 1996
    We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present ...

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    Epitaxial growth and physics of nanostructures for quantum dot lasers

    Arakawa, Y. | IEEE | 1996
    We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm ...

    Room temperature operation of MBE self-organized InGaAs quantum dot lasers

    Kamath, K. / Phillips, J. / Sosnovski, T. et al. | IEEE | 1996
    Quantum box lasers are expected to have very low threshold current densities, ultrahigh temperature stability of threshold current and high ...

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

    Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons

    Nakayama, H. / Arakawa, Y. | IEEE | 1996
    We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate ...

    Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer

    Shoji, H. / Nakata, Y. / Mukai, K. et al. | IEEE | 1996
    Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband ...

    Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam

    Phillips, J. / Kamath, K. / Sosnowski, T. et al. | IEEE | 1996
    ) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates. ...

    Self-assembled Quantum Dots For Laser Applications

    Nishi, K. / Saito, H. / Sugou, S. | IEEE | 1997

    Fabrication and characterization of semiconductor quantum dot lasers

    Charbonneau, S. | IEEE | 1997

    Near-field Optical Spectroscopy And Imaging Of Single Quantum Dots

    Saiki, T. / Yokoyama, Y. / Nishi, K. et al. | IEEE | 1997

    Vertical cavity surface emitting lasers based on vertically coupled quantum dots

    Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

    Optical Phonon Modes Of Cdse Quantum Dots In A Glass Matrix

    Young-Nam Hwang, / Sang-Cheon Kim, / Seung-Han Park, et al. | IEEE | 1997

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    Studies on silicon and germanium quantum dots for applications in electroluminescent devices

    Delgado, G.R. / Lee, H.W.H. | IEEE | 1997

    Observation Of Excitonic Energy Levels Of CuCl Quantum Dots Using Resonant One- And Two-photon Excitation

    Edamatsu, K. / Tsukii, M. / Hayashibe, K. et al. | IEEE | 1997

    Semiconductor quantum-dot photonic crystals

    Vlasov, Yu.A. / Yao, N. / Norris, D.J. | IEEE | 1999
    densely-packed semiconductor quantum dots is obtained. Therefore, the exact three-dimensional structure of the template is imprinted in the final ...

    Optical spectroscopy of single semiconductor quantum dots

    Dekel, E. / Gershoni, D. / Ehrenfreund, E. et al. | IEEE | 1999
    semiconductor quantum dot. The spectrally sharp transitions between discrete confined multiexcitonic states are quantitatively explained using a few ...

    Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

    Borri, P. / Langbein, W. / Hvam, J.M. et al. | IEEE | 1999
    InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots. ...

    Spectroscopy of self-assembled quantum dots in ZnSe

    Hailong Zhou, / Nurmikko, A.V. / Kobayashi, M. et al. | IEEE | 1999
    Summary form only given. The growth and study of self-assembled quantum dots in semiconductors commonly occurs in circumstances where a ...

    Lateral carrier confinement for ultralow threshold quantum dot VCSELs

    Kim, J.K. / Coldren, L.A. | IEEE | 1999

    Recovery dynamics of a PbS quantum dot doped glass passive mode locker

    Wundke, K. / Auxier, J.M. / Schulzgen, A. et al. | IEEE | 1999
    Summary form only given. Recently we demonstrated that PbS quantum dot doped glasses, fabricated by thermal treatment of an oxide molten ...

    Size-dependence of the excitonic dephasing time in CuCl spherical quantum dots

    Inoue, K. / Kuribayashi, R. | IEEE | 1999

    Observation of tera-hertz electromagnetic wave emission from InAs/GaAs quantum dots

    Furukawa, Y. / Noda, S. / Ishii, M. et al. | IEEE | 1999
    Summary form only given. The authors propose using the intersubband (ISB)-transition in self-assembled InAs/GaAs quantum dots (QDs) for THz ...

    Temperature dependence of lasing characteristics for 1.3 /spl mu/m GaAs-based quantum dot lasers

    Huffaker, D.L. / Shchekin, O. / Park, G. et al. | IEEE | 1999
    uncoated heterostructure lasers using an InGaAs quantum dot (QD) active region. Despite low threshold current density at 77 K, lasing at the higher ...

    Optical saturation of mid-infrared transitions in self-assembled InAs quantum dots: evidence for an LO phonon bottleneck

    Berryman, K.W. / Lyon, S.A. / Segev, M. et al. | IEEE | 1999
    Summary form only given. Semiconductor structures which are able to trap carriers in three dimensions, commonly known as quantum dots (QDs ...

    Low threshold (8 mA) 1.3-/spl mu/m CW lasing of InGaAs/InAs quantum dots at room temperature

    Mukai, K. / Nakata, Y. / Otsubo, K. et al. | IEEE | 1999
    Low threshold 1.3-/spl mu/m CW lasing of self-assembled InGaAs/GaAs quantum dots at 25/spl deg/C is presented. The developed multiplied ...

    Suppression of temperature sensitivity of interband emission energy by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots

    Mukai, K. / Sugawara, M. | IEEE | 1999
    the temperature dependence of emission energy can be greatly reduced in self-assembled InGaAs/GaAs quantum dots by an overgrowth of an In/sub ...

    Fabrication of nanostructures using electron beam interference technique-a proposal

    Gunawan, O. / Ng, S.L. / Ooi, C.H. et al. | IEEE | 1999
    quantum dot fabrication. In this paper, a method based on electron beam interference, for nanostructures fabrication is proposed. Nanoscale wires ...

    Saturable absorber modelocking using non-epitaxially grown semiconductor-doped films

    Bilinsky, I.P. / Prasankumar, R.P. / Walpole, J.N. et al. | IEEE | 1999
    quantum dots, one can adjust the absorption coefficient of the device. A wide range of semiconductor materials can be doped into the silica films ...

    Femtosecond interactions in semiconductor quantum dots

    Klimov, V.I. | IEEE | 2001
    as small as 5%. These nanoparticles are also known as nanocrystals or colloidal quantum dots (QDs). The sub-10-nm size range corresponds to a ...

    Metalorganic vapor phase epitaxy of quantum dots

    Coleman, J.J. / Yeoh, T.S. | IEEE | 2001
    A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography ...

    Quantum dot lasers for high power and telecommunication applications

    Reithmaier, J.P. / Klopf, F. / Krebs, R. | IEEE | 2001
    An overview is given about the recent development of high performance quantum dot lasers for 980 nm high power and 1.3 /spl mu/m ...

    Low frequency chirp self-assembled InGaAs/GaAs quantum dot lasers

    Hatori, N. / Sugawara, M. / Akiyama, T. et al. | IEEE | 2001
    We measured and compared frequency chirp between a quantum dot laser and a quantum well laser. The chirp of the quantum dot laser was below ...

    Excitation dependence of lateral beam width in a quantum-dot laser

    Schneider, H.C. / Chow, W.W. | IEEE | 2001
    We investigate the influence of the quantum-dot active material on the lateral field distribution in an edge-emitting geometry. We use the ...

    Carrier dynamics of single InAs quantum dots in a high density sample

    Sang-Kee Eah, / Sungchui Hohng, / Wonho Jhe, et al. | IEEE | 2001
    We performed time-resolved photoluminescence (PL) experiments on single InAs quantum dots in a high density sample. The PL rise time is ...

    Room-temperature CW operation of InP-based long-wavelength InAs quantum dot lasers

    Saito, H. / Nishi, K. / Sugou, S. | IEEE | 2001
    Long-wavelength quantum-dot lasers were fabricated on InP (311)B substrates by using high-dense InAs quantum dots (9 /spl times/10/sup 10 ...

    Saturation intensity in InAs quantum dot and its application to all-optical switches

    Nakamura, I. / Nishikawa, S. / Kohmoto, S. et al. | IEEE | 2001
    in simultaneous achievement of the above requirements. Quantum dots (QDs) are promising candidates for large ONL materials due to their delta ...

    Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots

    Kyoungsik Kim, / Norris, T.B. | IEEE | 2001

    Long-wavelength quantum dots: carrier dynamics and applications to lasers and light emitting diodes

    Deppe, D.G. / Chen, H. / Zou, Z. et al. | IEEE | 2001

    High temperature continuous wave operation of InAs quantum dot lasers near 1.3 /spl mu/m

    Qiu, Y. / Gogna, P. / Forouhar, S. et al. | IEEE | 2001

    Confined modes of two dimensional photonic crystal defect cavities with Indium Arsenide quantum dots

    Yoshie, T. / Scherer, A. / Hao Chen, et al. | IEEE | 2001
    quantum dots as active material. Single defect donor modes were found to have well localized close to the single defect. ...

    Quantum-dot semiconductor optical amplifiers for high bit-rate signal processing over 40 Gbit/s

    Sugawara, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2001
    We theoretically demonstrate that semiconductor optical amplifiers with self-assembled quantum dots can process high bit-rate optical ...

    Carrier dynamics in self-assembled InGaAs/GaAs quantum dots and their application to optical devices

    Sugawara, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2001
    This talk provides following topics on our research of self-assembled InGaAs/GaAs quantum dots: 1) carrier dynamics and optical gain, 2 ...

    Bias-dependent dual-spectral InAs/In/sub 0.15/Ga/sub 0.85/As quantum dot infrared photodetectors

    Zhengmao Ye, / Campbell, J.C. | IEEE | 2001
    InAs/InGaAs quantum dots infiared photodetectors (QDIPs) were studied. We report an InAs/In0.15Ga0.85As QDIP with ...

    Exciton Rabi oscillation in single quantum dot: temporal measurement of oscillation and corresponding energy level splitting

    Kamada, H. / Ando, H. / Takagahara, T. et al. | IEEE | 2001
    A spectroscopic method, which enables characterization of a single isolated quantum dot and quantum wave function interferometry is applied ...

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