Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.


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    Titel :

    Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer


    Beteiligte:
    Shoji, H. (Autor:in) / Nakata, Y. (Autor:in) / Mukai, K. (Autor:in) / Sugiyama, Y. (Autor:in) / Sugawara, M. (Autor:in) / Yokoyama, N. (Autor:in) / Ishikawa, H. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    181724 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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