Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband have been observed with an increasing number of quantum dot layer and with decreasing cavity loss.
Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer
1996-01-01
181724 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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