Room temperature operation of MBE self-organized InGaAs quantum dot lasers

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Room temperature operation of MBE self-organized InGaAs quantum dot lasers

Kamath, K. / Phillips, J. / Sosnovski, T. / Zhang, X. / Norris, T. / Bhattacharya, P.

Quantum box lasers are expected to have very low threshold current densities, ultrahigh temperature stability of threshold current and high differential gain 1¿ Various techniques have been tried to obtain highly ordered quantum dots. MBE self-organized growth is by far the most successful technique being developed for obtaining array of quantum dots. Spontaneous formation of 3D islands during strained layer epitaxy under Stranski-Krastanov growth mode, which exhibit uniformity in size, shape and spatial distribution, is responsible for obtaining 3 dimensional confinement needed for quantum boxes. However, there has been no report of high quality lasers made out of these quantum boxes, mainly due to the lack of good room temperature luminescence.

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Dokumentinformationen

Titel :

Room temperature operation of MBE self-organized InGaAs quantum dot lasers

Beteiligte:

Kamath, K. (Autor:in) / Phillips, J. (Autor:in) / Sosnovski, T. (Autor:in) / Zhang, X. (Autor:in) / Norris, T. (Autor:in) / Bhattacharya, P. (Autor:in)

Erschienen in:

Conference Digest. 15th IEEE International Semiconductor Laser Conference ; 105-106

Erscheinungsdatum :

1996-01-01

Format / Umfang :

161534 byte

ISBN :

0-7803-3163-X

DOI :

https://doi.org/10.1109/ISLC.1996.553769

Medientyp :

Aufsatz (Konferenz)