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Novel growth of GaN with low dislocation density for UV lasers

Aoyagi, Y. / Tanaka, S. / Takeuchi, M. et al. | IEEE | 2001

For realization of UV semiconductor laser using III-nitride materials there are couple of breakthroughs to be overcome. Quantum dots ...

Proposal for a near-field optical nano-switch

Kobayashi, K. / Kawazoe, T. / Sangu, S. et al. | IEEE | 2001

quantum dots. The switching time, which is controlled by another dot locally excited/de-excited, is estimated to be in the sub-nanosecond region. ...

Optical near-field spectroscopy of semiconductor nano-structures

Matsuda, K. / Saiki, T. / Saito, H. et al. | IEEE | 2001

formation of a periodic quantum dot array. We describe PL microscopy and spectroscopy of modulation doped GaAs-GaAlAs quantum well structures using ...

Semiconductor quantum-dot photonic crystals

Vlasov, Yu.A. / Yao, N. / Norris, D.J. | IEEE | 1999

densely-packed semiconductor quantum dots is obtained. Therefore, the exact three-dimensional structure of the template is imprinted in the final ...

Optical spectroscopy of single semiconductor quantum dots

Dekel, E. / Gershoni, D. / Ehrenfreund, E. et al. | IEEE | 1999

semiconductor quantum dot. The spectrally sharp transitions between discrete confined multiexcitonic states are quantitatively explained using a few ...

Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

Borri, P. / Langbein, W. / Hvam, J.M. et al. | IEEE | 1999

InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots. ...

Spectroscopy of self-assembled quantum dots in ZnSe

Hailong Zhou, / Nurmikko, A.V. / Kobayashi, M. et al. | IEEE | 1999

Summary form only given. The growth and study of self-assembled quantum dots in semiconductors commonly occurs in circumstances where a ...

Lateral carrier confinement for ultralow threshold quantum dot VCSELs

Kim, J.K. / Coldren, L.A. | IEEE | 1999

Recovery dynamics of a PbS quantum dot doped glass passive mode locker

Wundke, K. / Auxier, J.M. / Schulzgen, A. et al. | IEEE | 1999

Summary form only given. Recently we demonstrated that PbS quantum dot doped glasses, fabricated by thermal treatment of an oxide molten ...

Size-dependence of the excitonic dephasing time in CuCl spherical quantum dots

Inoue, K. / Kuribayashi, R. | IEEE | 1999

Observation of tera-hertz electromagnetic wave emission from InAs/GaAs quantum dots

Furukawa, Y. / Noda, S. / Ishii, M. et al. | IEEE | 1999

Summary form only given. The authors propose using the intersubband (ISB)-transition in self-assembled InAs/GaAs quantum dots (QDs) for THz ...

Temperature dependence of lasing characteristics for 1.3 /spl mu/m GaAs-based quantum dot lasers

Huffaker, D.L. / Shchekin, O. / Park, G. et al. | IEEE | 1999

uncoated heterostructure lasers using an InGaAs quantum dot (QD) active region. Despite low threshold current density at 77 K, lasing at the higher ...

Optical saturation of mid-infrared transitions in self-assembled InAs quantum dots: evidence for an LO phonon bottleneck

Berryman, K.W. / Lyon, S.A. / Segev, M. et al. | IEEE | 1999

Summary form only given. Semiconductor structures which are able to trap carriers in three dimensions, commonly known as quantum dots (QDs ...

Low threshold (8 mA) 1.3-/spl mu/m CW lasing of InGaAs/InAs quantum dots at room temperature

Mukai, K. / Nakata, Y. / Otsubo, K. et al. | IEEE | 1999

Low threshold 1.3-/spl mu/m CW lasing of self-assembled InGaAs/GaAs quantum dots at 25/spl deg/C is presented. The developed multiplied ...

Suppression of temperature sensitivity of interband emission energy by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots

Mukai, K. / Sugawara, M. | IEEE | 1999

the temperature dependence of emission energy can be greatly reduced in self-assembled InGaAs/GaAs quantum dots by an overgrowth of an In/sub ...

Fabrication of nanostructures using electron beam interference technique-a proposal

Gunawan, O. / Ng, S.L. / Ooi, C.H. et al. | IEEE | 1999

quantum dot fabrication. In this paper, a method based on electron beam interference, for nanostructures fabrication is proposed. Nanoscale wires ...

Saturable absorber modelocking using non-epitaxially grown semiconductor-doped films

Bilinsky, I.P. / Prasankumar, R.P. / Walpole, J.N. et al. | IEEE | 1999

quantum dots, one can adjust the absorption coefficient of the device. A wide range of semiconductor materials can be doped into the silica films ...

Self-assembled Quantum Dots For Laser Applications

Nishi, K. / Saito, H. / Sugou, S. | IEEE | 1997

Fabrication and characterization of semiconductor quantum dot lasers

Charbonneau, S. | IEEE | 1997

Near-field Optical Spectroscopy And Imaging Of Single Quantum Dots

Saiki, T. / Yokoyama, Y. / Nishi, K. et al. | IEEE | 1997

Vertical cavity surface emitting lasers based on vertically coupled quantum dots

Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

Optical Phonon Modes Of Cdse Quantum Dots In A Glass Matrix

Young-Nam Hwang, / Sang-Cheon Kim, / Seung-Han Park, et al. | IEEE | 1997

Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

Studies on silicon and germanium quantum dots for applications in electroluminescent devices

Delgado, G.R. / Lee, H.W.H. | IEEE | 1997

Observation Of Excitonic Energy Levels Of CuCl Quantum Dots Using Resonant One- And Two-photon Excitation

Edamatsu, K. / Tsukii, M. / Hayashibe, K. et al. | IEEE | 1997

Single quantum dot spectroscopy

Gammon, D. / Snow, E.S. / Shanabrook, B.V. et al. | IEEE | 1996

Semiconductor quantum dots localize the exciton in all three spatial dimensions and completely quantize the exciton energy spectrum. In the ...

To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge

Asryan, L.V. / Suris, R.A. | IEEE | 1996

An extension of the theory of quantum dot (QD) lasers is carried out which takes proper account of QD charge. The inclusion of the charge ...

Low-temperature near-field spectroscopy of quantum dots

Arakawa, Y. / Toda, Y. / Nagamune, Y. et al. | IEEE | 1996

We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present ...

Overcoming gain saturation in InAs/GaAs quantum dot lasers

Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996

By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

Epitaxial growth and physics of nanostructures for quantum dot lasers

Arakawa, Y. | IEEE | 1996

We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm ...

Room temperature operation of MBE self-organized InGaAs quantum dot lasers

Kamath, K. / Phillips, J. / Sosnovski, T. et al. | IEEE | 1996

Quantum box lasers are expected to have very low threshold current densities, ultrahigh temperature stability of threshold current and high ...

Room temperature quantum dot lasers: From basic experiments to first device oriented structures

Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996

Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons

Nakayama, H. / Arakawa, Y. | IEEE | 1996

We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate ...

Room temperature lasing at lower-order subband of self-formed InGaAs quantum dot lasers with multi-stacked dot layer

Shoji, H. / Nakata, Y. / Mukai, K. et al. | IEEE | 1996

Self-formed InGaAs quantum dot lasers with multi-stacked dot layer have been fabricated. Room temperature lasing at a lower-order subband ...

Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam

Phillips, J. / Kamath, K. / Sosnowski, T. et al. | IEEE | 1996

) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates. ...

Formation of Landau levels in CdSSe quantum dots by a magnetic field

Yumoto, J. / Uesugi, N. | IEEE | 1995

Near-field optical properties of CaAs quantum dot structures measured by photon scanning tunnelling

Toda, Y. / Kourogi, M. / Arakawa, Y. et al. | IEEE | 1995