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Bhattacharya, P.   Elektronische Ressource   Englisch   Auswahl aufheben

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    High speed quantum dot lasers

    Bhattacharya, P. / Ghosh, S. / Wu, Z.-K. et al. | IEEE | 2002
    Self-organized quantum dot lasers, grown by MBE or MOVPE, have demonstrated superior characteristics such as large differential gain, ultra ...

    Dynamic characteristics of quantum dot lasers

    Bhattacharya, P. | IEEE | 2004
    This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD ...

    Spin polarized quantum dot light emitters

    Bhattacharya, P. / Ghosh, S. | IEEE | 2002
    Summary form only given. In this paper, we describe the growth of (In,Mn)As self-organized quantum dots, or "diluted magnetic quantum dots ...

    Room temperature operation of resonant tunneling quantum dot infrared detectors

    Chakrabarti, S. / Su, X.H. / Ariyawansa, G. et al. | IEEE | 2005
    We present a novel tunnel quantum dot infrared photodetector which exhibit large photoresponse at 6/spl mu/m and 17/spl mu/m at 300K and ...

    Electrically injected photonic crystal edge emitting quantum dot light source

    Topolancik, J. / Pradhan, S. / Yu, P.-C. et al. | IEEE | 2003
    presents a novel electrically injected 2D PC-based quantum dot edge emitting light source with coupled PC waveguide that avoids carrier ...

    Ultrafast electronic dynamics in unipolar n-doped InAs/GaAs quantum dot structures

    Wu, Z.-K. / Choi, H. / Norris, T.B. et al. | IEEE | 2005
    Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy on n-doped quantum dots directly reveals electron ...

    Characteristics of high performance 1.3 /spl mu/m tunnel injection quantum dot lasers

    Mi, Z. / Fathpour, S. / Bhattacharya, P. | IEEE | 2005
    1.3 /spl mu/m tunnel injection InAs quantum dot lasers are reported for the first time. They exhibit T/sub 0/ = /spl infin/ (5/spl deg/C ...

    Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers

    Stiff-Roberts, A.D. / Chakrabarti, S. / Bhattacharya, P. et al. | IEEE | 2003

    High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector

    Stiff-Roberts, A.D. / Chakrabarti, S. / Kennerly, S. et al. | IEEE | 2003

    Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

    Stewart, K. / Buda, M. / Wong-Leung, J. et al. | IEEE | 2002
    In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared ...

    Room temperature operation of MBE self-organized InGaAs quantum dot lasers

    Kamath, K. / Phillips, J. / Sosnovski, T. et al. | IEEE | 1996
    Quantum box lasers are expected to have very low threshold current densities, ultrahigh temperature stability of threshold current and high ...

    Modulation characteristics of high-speed tunnel injection In/sub 0.4/Ga/sub 0.6/As quantum dot lasers

    Pradhan, S. / Ghosh, S. / Bhattacharya, P. | IEEE | 2002
    InGaAs/GaAs quantum dot lasers in which electrons are injected to the lasing ground state of the dots by tunneling. We report here the room ...

    Modulation characteristics of In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot gain-coupled distributed feedback lasers

    Fathpour, S. / Bhattacharya, P. / Pradhan, S. et al. | IEEE | 2003
    This paper presents the high-speed modulation characteristics of In/sub 0.4/Ga/sub 0.60/As/GaAs self-organized quantum dot gain-coupled DFB ...

    Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam

    Phillips, J. / Kamath, K. / Sosnowski, T. et al. | IEEE | 1996
    ) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates. ...

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