This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD) laser performance. This study also presents the L-I characteristics of a single-mode 1.3 /spl mu/m p-doped QD laser at various temperatures. Results show that this is the first time that a semiconductor laser has displayed such temperature invariant features.
Dynamic characteristics of quantum dot lasers
2004-01-01
132129 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Dynamic Characteristics of Quantum Dot Lasers
British Library Conference Proceedings | 2004
|Characteristics of Dilute Nitride Quantum Well Lasers
British Library Conference Proceedings | 2005
|Characteristics of dilute-nitride quantum well lasers
IEEE | 2005
|Characteristics of long wavelength quantum dots lasers
IEEE | 2003
|Modulation Characteristics of p-doped Quantum Dot Lasers
British Library Conference Proceedings | 2003
|