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    1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design

    Deubert, S. / Krebs, R. / Reithmaier, J.P. et al. | IEEE | 2003
    This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design ...

    1.3/spl mu/m electroluminescence from MOCVD-grown quantum dots

    Wong, P.S. / Xin, Y. / Birudavolu, S. et al. | IEEE | 2003

    1.3 /spl mu/m high density quantum dot laser with short cavity and cleaved facet

    Amano, T. / Sugaya, T. / Komori, K. | IEEE | 2005
    This paper reports the characteristics of a high density quantum dot (QD) laser. This work demonstrates beyond 1.3-/spl mu/m wavelength ...

    1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

    Mao, M.-H. / Wu, T.-Y. / Chang, F.-Y. et al. | IEEE | 2003
    In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation ...

    1.3μm Quantum Dot Self-Aligned Stripe Laser

    Groom, K. M. / Assamoi, P. J. / Hugues, M. et al. | IEEE | 2008
    We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at ...

    1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

    Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004
    This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...

    1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers

    Balakrishnan, G. / Dawson, L.R. / Huffaker, D.L. et al. | IEEE | 2003
    We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state ...

    2-D photonic crystal microcavities

    Scherer, A. / Yoshie, T. / Loncar, M. et al. | IEEE | 2003
    We have recently developed photonic crystal nanocavities and lasers from both InGaAsP quantum well and InGaAs/GaAs quantum dot materials ...

    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

    Hopfer, F. / Mutig, A. / Fiol, G. et al. | IEEE | 2006

    20 GHz colliding pulse mode-locking of InGaAs quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IEEE | 2005
    Colliding pulse mode-locking is demonstrated for the first time in quantum-dot lasers. Close to transform limited, 7 ps, 20 GHz pulses are ...

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 /spl mu/m

    Tan, W.K. / Bryce, A.C. / Marsh, J.H. et al. | IEEE | 2004
    35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 /spl mu/m is reported for the first ...

    100-nm quantum dot waveguides by two-layer self-assembly

    Chia-Jean Wang, / Lin, L.Y. / Parviz, B.A. | IEEE | 2005
    We demonstrate for the first time fabrication of 100 nm and 500 nm quantum dot waveguides, whose design relies on stimulated emission to ...

    1300 nm on gallium arsenide: quantum dots vs GaInNAs

    Fiore, A. / Markus, A. / Chen, J.X. et al. | IEEE | 2002
    quantum dots (QDs). By directly comparing the radiative properties of identical structures comprising QDs and GaInNAs QWs, we evidence the ...

    2004 IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581)

    IEEE | 2004
    program; polarization mode dispersion; microfluidic devices; quantum dot materials and devices; hardware for optical communications; sensor ...

    2005 IEEE LEOS Annual Meeting

    IEEE | 2005
    The following topics are dealt with: careers in optical engineering optoelectronics research; lasers in remote sensing; quantum dots ...

    Absence of filamentation in quantum-dot lasers. Theory and experiment

    Chow, W.W. / Schneider, H.C. / Pearce, E.J. et al. | IEEE | 2002
    We theoretically and experimentally investigate the lateral mode behavior of quantum-dot lasers, and demonstrate the absence of ...

    A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures

    Pearce, E.J. / Smowton, P.M. / Summers, H.D. et al. | IEEE | 2003
    Carrier distributions in DWELL (quantum dot within a quantum well) and standard quantum dot (QD) lasers are similar but radiative ...

    Active Mode-Locking of Quantum Dot Fabry-Perot Laser Diode

    Shen, A. / van Dijk, F. / Renaudier, J. et al. | IEEE | 2006

    All-epitaxial buried heterostructure quantum dot vertical-cavity surface-emitting lasers and single quantum dot light sources

    Deppe, D.G. / Ahn, J. / Lu, D. et al. | IEEE | 2005
    In this paper, experimental data based on incorporating self-organized quantum dots (QDs) in a new type of all-epitaxial microcavity that ...

    All optical quantum dot spin manipulation

    Atature, M. / Dreiser, J. / Hogele, A. et al. | IEEE | 2005
    The coherence time of an excess electron spin confined in a quantum dot structure is expected to be orders of magnitude longer than the ...

    Alpha parameter in quantum-dot amplifier under optical and electrical carrier modulation

    van der Poel, M. / Birkedal, D. / Hvam, J. et al. | IEEE | 2004
    Alpha parameter of a long-wavelength quantum-dot amplifier near 1.3 /spl mu/m is measured to be below one even with saturated gain. A ...

    A master oscillator power amplifier system based on external cavity mode-locking of a quantum-dot two-section diode laser

    Myoung-Taek Choi, / Wangkuen Lee, / Ji-Myung Kim, et al. | IEEE | 2005

    An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers

    Uskov, A.V. / O'Reilly, E.P. / McPeake, D. et al. | IEEE | 2004
    The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is ...

    A nanophotonic NOT-gate using near-field optically coupled quantum dots

    Kawazoe, T. / Kobayashi, K. / Ohtsu, M. | IEEE | 2005
    We demonstrate, for the first time, operation of a nanometric (20 nm) optical NOT-gate using quantum dots coupled by an optical near-field ...

    Anticompetition of laser modes in quantum dot lasers

    Yi-Shin Su, / Ching-Fuh Lin, | IEEE | 2005
    Laser-mode anticompetition is observed in a quantum-dot laser. The laser is operated at 1168.5 nm and 1262.3 nm wavelength simultaneously ...

    A single-photon resonant-cavity LED

    Bennett, A.J. / Unitt, D.C. / See, P. et al. | IEEE | 2005
    We describe an electrically driven single photon source consisting of a single InAs/GaAs quantum dot within a planar microcavity. Single ...

    Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

    Marko, I.P. / Andreev, A.D. / Adams, A.R. et al. | IEEE | 2003
    The Auger recombination in 1.3/spl mu/m InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical ...

    Auger Recombination is NOT Necessary to Explain the Temperature Dependence of Threshold in p-doped Quantum Dot Lasers

    Smowton, P.M. / Sandall, I.C. / Thomson, J.D. et al. | IEEE | 2006

    Back Reflector with Diffractive Gratings for Light-Trapping in Thin-Film III-V Solar Cells

    Aho, Timo / Tukiainen, Antti / Elsehrawy, Farid et al. | IEEE | 2019
    absorption at 1-eV spectral range for dilute nitride and quantum dot materials and report on the influence of planar back reflectors on the ...

    Bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers

    Kim, S. / Bryce, A.C. / Smith, C.J.M. et al. | IEEE | 2004
    Bandgap tuned quantum dot lasers were fabricated and their performance compared to lasers fabricated from as-grown material. The output ...

    Bias-dependent dual-spectral InAs/In/sub 0.15/Ga/sub 0.85/As quantum dot infrared photodetectors

    Zhengmao Ye, / Campbell, J.C. | IEEE | 2001
    InAs/InGaAs quantum dots infiared photodetectors (QDIPs) were studied. We report an InAs/In0.15Ga0.85As QDIP with ...

    Bias-dependent tunable response of normal incidence long wave infrared quantum dot detectors

    Krishna, S. / Rotella, P. / Raghavan, S. et al. | IEEE | 2002
    We report development of array compatible individual high-performance quantum dot pixel structures that allow for spectral tuning by the ...

    Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons

    Nakayama, H. / Arakawa, Y. | IEEE | 1996
    We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate ...

    Carrier distribution and self heating in quantum dot and quantum well lasers

    Smowton, P.M. / Pearce, E.J. / Hopkinson, M. | IEEE | 2003

    Carrier dynamics in self-assembled InGaAs/GaAs quantum dots and their application to optical devices

    Sugawara, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2001
    This talk provides following topics on our research of self-assembled InGaAs/GaAs quantum dots: 1) carrier dynamics and optical gain, 2 ...

    Carrier dynamics of single InAs quantum dots in a high density sample

    Sang-Kee Eah, / Sungchui Hohng, / Wonho Jhe, et al. | IEEE | 2001
    We performed time-resolved photoluminescence (PL) experiments on single InAs quantum dots in a high density sample. The PL rise time is ...

    Cavity ring-down spectroscopy of semiconductor quantum dots

    Berry, J.J. / Harvey, T.E. / Mirin, R.P. et al. | IEEE | 2004

    Cavity solitons and self organized patterns in semiconductor quantum dot microcavities

    Maggipinto, T. / Perrini, I.M. / Brambilla, M. et al. | IEEE | 2002
    Summary form only given. We propose to use InAs Quantum Dots (QD), embedded in GaAs, as a new active material for pattern and localized ...

    CdTe quantum-dot doped glass for 1 Tbit/s all-optical switching

    Padilha, L.A. / Cesar, C.L. / Barbosa, L.C. et al. | IEEE | 2005
    Carrier recombination in CdTe quantum-dots is shown to be faster than 1ps without accumulation in long-lived states. Thermal effects ...

    Characteristics of 1.3-μm Quantum Dots Laser with a High Density and a High Uniformity QD

    Amano, T. / Sugaya, T. / Komori, K. | IEEE | 2006

    Characteristics of high performance 1.3 /spl mu/m tunnel injection quantum dot lasers

    Mi, Z. / Fathpour, S. / Bhattacharya, P. | IEEE | 2005
    1.3 /spl mu/m tunnel injection InAs quantum dot lasers are reported for the first time. They exhibit T/sub 0/ = /spl infin/ (5/spl deg/C ...

    Characteristics of InGaAs quantum dots grown on tensile-strained GaAs/sub 1-x/P/sub x/

    Kim, N.H. / Ramamurthy, P. / Mawsi, L.J. et al. | IEEE | 2004
    This paper reports on the optical and structural properties of In/sub 0.5/Ga/sub 0.5/As (nominal composition) quantum dots (QDs)grown on ...

    Characteristics of long wavelength quantum dots lasers

    Kim, S.M. / Harris, J.S. | IEEE | 2003
    In this paper characteristics of long wavelength quantum dots lasers is discussed. Small signal modulation response was measured at room ...

    Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy

    Oh, S. J. / Kang, C. / Maeng, I. H. et al. | IEEE | 2006

    Chemical sensors and quantum-dot lasers based on WGM microresonators

    Rosenberger, A.T. | IEEE | 2004
    In this paper semiconductor quantum-dot lasers and trace-gas or liquid-chemical sensors based on whispering-gallery-mode microresonators ...

    CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671)

    IEEE | 2003
    ; quantum dot physics; waveguide devices; femtosecond laser processing; microfabrication and microsystem; organic light emitting diode; optical ...

    Coherent Nonlinear Effects in Single Quantum Dots

    Kamada, H. / Gotoh, H. / Hughes, S. | IEEE | 2005

    Coherent optical manipulation of quantum dot spins: a path into quantum computing

    Steel, D. / Cheng, J. / Wu, Y. et al. | IEEE | 2005
    Coherent control of quantum dot qubits transfers optical coherence to electronic coherence and provides a means to demonstrate details of ...

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