Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy

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Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy

Oh, S. J. / Kang, C. / Maeng, I. H. / Cho, N. K. / Song, J. D. / Choi, W. J. / Lee, J. I. / Son, J.-H.

We have investigated the carrier capture behavior of n-type modulation-doped InAs/GaAs QDs using THz time-domain spectroscopy (THz TDS) in order to estimate the total number of electrons captured by the QDs. The THz transmission of the sample with QDs (#1) is larger than that of the sample without QDs (#2). From the THz waveforms and subsequent analysis, the #1 sample shows lower conductivity which is resulted from the smaller number of free carriers due to the capture by the QDs.

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Dokumentinformationen

Titel :

Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy

Beteiligte:

Oh, S. J. (Autor:in) / Kang, C. (Autor:in) / Maeng, I. H. (Autor:in) / Cho, N. K. (Autor:in) / Song, J. D. (Autor:in) / Choi, W. J. (Autor:in) / Lee, J. I. (Autor:in) / Son, J.-H. (Autor:in)

Erschienen in:

2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics ; 55

Erscheinungsdatum :

2006-09-01

Format / Umfang :

1055849 byte

ISBN :

1-4244-0400-2 , 1-4244-0399-5

DOI :

https://doi.org/10.1109/ICIMW.2006.368264

Medientyp :

Aufsatz (Konferenz)