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Bhattacharya, P.   Elektronische Ressource   Englisch   Auswahl aufheben

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    Room temperature operation of resonant tunneling quantum dot infrared detectors

    Chakrabarti, S. / Su, X.H. / Ariyawansa, G. et al. | IEEE | 2005
    We present a novel tunnel quantum dot infrared photodetector which exhibit large photoresponse at 6/spl mu/m and 17/spl mu/m at 300K and ...

    Ultrafast electronic dynamics in unipolar n-doped InAs/GaAs quantum dot structures

    Wu, Z.-K. / Choi, H. / Norris, T.B. et al. | IEEE | 2005
    Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy on n-doped quantum dots directly reveals electron ...

    Characteristics of high performance 1.3 /spl mu/m tunnel injection quantum dot lasers

    Mi, Z. / Fathpour, S. / Bhattacharya, P. | IEEE | 2005
    1.3 /spl mu/m tunnel injection InAs quantum dot lasers are reported for the first time. They exhibit T/sub 0/ = /spl infin/ (5/spl deg/C ...

    Dynamic characteristics of quantum dot lasers

    Bhattacharya, P. | IEEE | 2004
    This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD ...

    Electrically injected photonic crystal edge emitting quantum dot light source

    Topolancik, J. / Pradhan, S. / Yu, P.-C. et al. | IEEE | 2003
    presents a novel electrically injected 2D PC-based quantum dot edge emitting light source with coupled PC waveguide that avoids carrier ...

    High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector

    Stiff-Roberts, A.D. / Chakrabarti, S. / Kennerly, S. et al. | IEEE | 2003

    Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers

    Stiff-Roberts, A.D. / Chakrabarti, S. / Bhattacharya, P. et al. | IEEE | 2003

    Modulation characteristics of In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot gain-coupled distributed feedback lasers

    Fathpour, S. / Bhattacharya, P. / Pradhan, S. et al. | IEEE | 2003
    This paper presents the high-speed modulation characteristics of In/sub 0.4/Ga/sub 0.60/As/GaAs self-organized quantum dot gain-coupled DFB ...

    High speed quantum dot lasers

    Bhattacharya, P. / Ghosh, S. / Wu, Z.-K. et al. | IEEE | 2002
    Self-organized quantum dot lasers, grown by MBE or MOVPE, have demonstrated superior characteristics such as large differential gain, ultra ...

    Spin polarized quantum dot light emitters

    Bhattacharya, P. / Ghosh, S. | IEEE | 2002
    Summary form only given. In this paper, we describe the growth of (In,Mn)As self-organized quantum dots, or "diluted magnetic quantum dots ...

    Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

    Stewart, K. / Buda, M. / Wong-Leung, J. et al. | IEEE | 2002
    In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared ...

    Modulation characteristics of high-speed tunnel injection In/sub 0.4/Ga/sub 0.6/As quantum dot lasers

    Pradhan, S. / Ghosh, S. / Bhattacharya, P. | IEEE | 2002
    InGaAs/GaAs quantum dot lasers in which electrons are injected to the lasing ground state of the dots by tunneling. We report here the room ...

    Room temperature operation of MBE self-organized InGaAs quantum dot lasers

    Kamath, K. / Phillips, J. / Sosnovski, T. et al. | IEEE | 1996
    Quantum box lasers are expected to have very low threshold current densities, ultrahigh temperature stability of threshold current and high ...

    Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam

    Phillips, J. / Kamath, K. / Sosnowski, T. et al. | IEEE | 1996
    ) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates. ...

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