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    QUANTUM DOT-BASED LIGHTING SYSTEM FOR AN AIRCRAFT

    Freier Zugriff
    SAM LUIS / JOHANNESSEN ERIC / UPTON BRENDAN | Europäisches Patentamt | 2018

    An aircraft lighting system includes quantum dot light-emitting diodes (“QLEDs”), including a first QLED of a first color and a second

     ...

      Quantum dot-based lighting system for an aircraft

      Freier Zugriff
      SAM LUIS / JOHANNESSEN ERIC / UPTON BRENDAN | Europäisches Patentamt | 2018

      An aircraft lighting system includes quantum dot light-emitting diodes (“QLEDs”), including a first QLED of a first color and a second

       ...

    Quantum dot THz detectors and its applications for imaging

    Ikushima, Kenji | SPIE | 2018
    paper, we review quantum-dot type THz photon detectors and its applications for passive THz imaging. ...

    Quantum dot optoelectronic devices

    Jagadish, C. / Tan, H.H. | IEEE | 2005

    Preparation of CdSe Quantum Dots and Characterization of Single CdSe Quantum Dots

    Bao, J. / Shen, Y / Li, T.X. et al. | IEEE | 2006
    The photoluminescence of CdSe quantum dots with different diameter were studied in toluene and on silicon substrate. Single CdSe quantum ...

    Quantum dot semiconductor lasers

    Reithmaier, J.P. / Deubert, S. / Somers, A. et al. | IEEE | 2004
    Quantum dot lasers for 980 nm high brightness high power applications and for long wavelength telecom applications based on InP were ...

    Surface morphology of LPE-growth GaSb quantum dots

    Wang, Yang / Hu, Shuhong / Lv, Yingfei et al. | SPIE | 2015
    The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase ...

    Patterned InAs quantum dot formation

    Birudavolu, S. / Luong, S.Q. / Hains, C.P. et al. | IEEE | 2004
    We describe the growth and characterization of InAs quantum dots (QDs) on a patterned GaAs substrate using metal organic chemical vapor ...

    Quantum optics with quantum dots

    Imamoglu, A. | IEEE | 2005
    -assembled quantum dots is presented. ...

    Optical Properties of Semiconductor Quantum Dots

    Chow, W. W. | IEEE | 2008
    An important step towards realizing the advantages of quantum dots in electro-optic applications is to understand the excitation ...

    1.3μm Quantum Dot Self-Aligned Stripe Laser

    Groom, K. M. / Assamoi, P. J. / Hugues, M. et al. | IEEE | 2008
    We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at ...

    High speed quantum dot lasers

    Bhattacharya, P. / Ghosh, S. / Wu, Z.-K. et al. | IEEE | 2002
    Self-organized quantum dot lasers, grown by MBE or MOVPE, have demonstrated superior characteristics such as large differential gain, ultra ...

    All optical quantum dot spin manipulation

    Atature, M. / Dreiser, J. / Hogele, A. et al. | IEEE | 2005
    The coherence time of an excess electron spin confined in a quantum dot structure is expected to be orders of magnitude longer than the ...

    Single Layer Printed Photodetector Based on MEH:PPV-MoS2 Quantum Dots Composite

    Sajid, Memoon / Kim, Soo Wan / Bum Kim, Hyun et al. | IEEE | 2018
    thin film. The active region consists of a composite of MEH:PPV and MoS2 quantum dots. The device was fabricated using reverse ...

    Spectral Characteristics of CdSe Quantum Dots

    Cheng, Cheng / Wang, Xiaoyan | IEEE | 2006
    The absorption and emission spectra of the CdSe quantum dots about 3-nm diameter are measured. The peak value of the absorption cross ...

    Quantum Dot Semiconductor Optical Amplifiers and Switches

    Penty, R.V. / White, I.H. / Liu, S. et al. | IEEE | 2006

    Dynamic characteristics of quantum dot lasers

    Bhattacharya, P. | IEEE | 2004
    This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD ...

    InGaNAs Quantum Dot Lasers at 1.36 μm

    Fischer, M. / Marquardt, B. / Bisping, D. et al. | IEEE | 2006

    All-epitaxial buried heterostructure quantum dot vertical-cavity surface-emitting lasers and single quantum dot light sources

    Deppe, D.G. / Ahn, J. / Lu, D. et al. | IEEE | 2005
    In this paper, experimental data based on incorporating self-organized quantum dots (QDs) in a new type of all-epitaxial microcavity that ...

    Single quantum dot spectroscopy

    Gammon, D. / Snow, E.S. / Shanabrook, B.V. et al. | IEEE | 1996
    Semiconductor quantum dots localize the exciton in all three spatial dimensions and completely quantize the exciton energy spectrum. In the ...

    Telecom wavelength quantum dot single photon source

    Ward, M.B. / Karimov, O.Z. / Unitt, D.C. et al. | IEEE | 2005

    Quantum dot lasers and optoelectronic device integration

    Sears, K. / Mokkapati, S. / Buda, M. et al. | IEEE | 2005
    This paper highlights quantum dot (QD) lasers and QD optoelectronic device integration. The emission spectrum, room temperature ...

    InAs quantum dot microdisk injection laser

    Lidong Zhang, / Hu, E. | IEEE | 2003
    An airbridge contacted quantum dot microdisk diode with continuous-wave lasing at 5 K is reported. The threshold current is as low as 43 ...

    Spin polarized quantum dot light emitters

    Bhattacharya, P. / Ghosh, S. | IEEE | 2002
    Summary form only given. In this paper, we describe the growth of (In,Mn)As self-organized quantum dots, or "diluted magnetic quantum dots ...

    Unidirectional operation of quantum-dot ring lasers

    Hongjun Cao, / Hui Deng, / Hai Ling, et al. | IEEE | 2005
    First monolithically integrated ridge-waveguide InAs/InGaAs quantum-dot ring lasers are fabricated and characterized. Enhanced by a forward ...

    Optical amplification in silicon quantum dot superlattices

    Ruan, J. / Chen, H. / Fauchet, P.M. | IEEE | 2005
    We report results on optical gain in superlattices containing nm-thick Si quantum dot layers. Using VSL method a fast (nsec) ASE component ...

    Normal-incidence quantum dot infrared photodetectors

    Zhonghui Chen, / Zhengmao Ye, / Eui-Tae Kim, et al. | IEEE | 2002
    ) based on epitaxial InAs/InAlGaAs quantum dots. ...

    Semiconductor quantum-dot photonic crystals

    Vlasov, Yu.A. / Yao, N. / Norris, D.J. | IEEE | 1999
    densely-packed semiconductor quantum dots is obtained. Therefore, the exact three-dimensional structure of the template is imprinted in the final ...

    Quantum Dot Based Phase Modulator at 1300 nm

    Hegarty, S.P. / Goulding, D. / Huyet, G. | IEEE | 2006

    Localised recombination and gain in quantum dots

    Pask, H.J. / Summers, H.D. / Blood, P. | IEEE | 2005

    Tuning and Modulation in Two Section Quantum Dot Lasers

    Childs, D. T. D. / Stevens, B. J. / Groom, K. M. et al. | IEEE | 2008
    Two section lasers enable some novel properties of quantum dots to be realised. Engineering these quantum dots results in two very ...

    PbS quantum dot lasers: towards high quality tuneable emission across the short-wave infrared

    Whitworth, Guy L. / Dalmases, Mariona / Taghipour, Nima et al. | SPIE | 2022
    Lead sulfide (PbS) colloidal quantum dots (CQDs) are a novel infrared gain medium, which can exhibit tunable gain across the short-wave ...

    Coherent Nonlinear Effects in Single Quantum Dots

    Kamada, H. / Gotoh, H. / Hughes, S. | IEEE | 2005

    Modeling a Single Doped Quantum Dot Fiber Amplifier

    Cheng, C. / Zhang, H. / Wang, X.Y. | IEEE | 2006
    A new kind of dopantsemiconductor nanocrystal (quantum dot) doped into a fiber forming a quantum-dot-doped fiber and thereby configuring a ...

    Wideband polarization insensitivity quantum dot optical amplifier

    Kita, T. / Jayavel, P. / Tanaka, H. et al. | IEEE | 2003
    Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization ...

    Anticompetition of laser modes in quantum dot lasers

    Yi-Shin Su, / Ching-Fuh Lin, | IEEE | 2005
    Laser-mode anticompetition is observed in a quantum-dot laser. The laser is operated at 1168.5 nm and 1262.3 nm wavelength simultaneously ...

    To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge

    Asryan, L.V. / Suris, R.A. | IEEE | 1996
    An extension of the theory of quantum dot (QD) lasers is carried out which takes proper account of QD charge. The inclusion of the charge ...

    Quantum dot infrared sensors with photonic crystal cavity

    Krishna, S. / Posani, K.T. / Tripathi, V. et al. | IEEE | 2005
    infrared photodetector temperature of the quantum dot detector. The results of spectral response measurements of InAs/InGaAs/GaAs dots-in-well ...

    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    Photonic crystal and III-N quantum dot laser

    Aoyagi, Y. / Inoue, S. / Takeuchi, M. et al. | IEEE | 2005
    Deep UV light emitting devices are important for future medical, environmental and IT applications. Generation of DUV light using quantum ...

    Slow-light in nonuniform quantum dot waveguide

    Ku, P.C. / Chang-Hasnain, C.J. / Kim, J. et al. | IEEE | 2003
    We analyzed a new variable all-optical buffer using semiconductor quantum dots (QD). We show that an InAs-InGaAs-GaAs QD waveguide with 20 ...

    Femtosecond interactions in semiconductor quantum dots

    Klimov, V.I. | IEEE | 2001
    as small as 5%. These nanoparticles are also known as nanocrystals or colloidal quantum dots (QDs). The sub-10-nm size range corresponds to a ...

    Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers

    Tan, H. / Kamath, K. / Bhattacharya, R. et al. | IEEE | 2004
    This study presents evidence for reduced thermal conductivity in quantum dot (QD) active region from chirp characteristics in InGaAs/GaAs ...

    Quantum dots for lasers, amplifiers and computing

    Bimberg, D. | IEEE | 2003
    Quantum dots (QDs) enable novel photonic devices like edge and surface emitting lasers, or amplifiers with dramatically improved properties ...

    Tunneling injection quantum-dot laser: Theory and experiment

    Chuang, S.L. / Kondratko, P.K. / Kim, J. et al. | IEEE | 2004
    quantum-dot laser is investigated. The mechanisms of tunneling injection are presented. ...

    Random Population and Localised Recombination in Quantum Dot Structures

    Blood, P. / Pask, H. / Summers, H. | IEEE | 2006

    Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers

    Malic, E. / Kwang J. Ahn, / Bormann, M.J.P. et al. | IEEE | 2006

    Magnetization imaging of single CdMnTe/ZnTe quantum dots

    Smith, L.M. / Gurung, T. / Mackowski, S. et al. | IEEE | 2005

    IR quantum dot detectors with miniband tunnel extraction

    Schrey, F.F. / Nguyen, D.P. / Mueller, T. et al. | IEEE | 2004
    absorption properties to desired energy transitions in quantum dot based photodetectors (QDIPs). Embedding of the self organised InAs quantum dots ...

    Characteristics of long wavelength quantum dots lasers

    Kim, S.M. / Harris, J.S. | IEEE | 2003
    In this paper characteristics of long wavelength quantum dots lasers is discussed. Small signal modulation response was measured at room ...

    Excitation induced polarization decay in semiconductor quantum dots

    Schneider, H.C. / Chow, W.W. / Koch, S.W. | IEEE | 2005
    Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction ...