Surface morphology of LPE-growth GaSb quantum dots
Surface morphology of LPE-growth GaSb quantum dots
- Neue Suche nach: Wang, Yang
- Neue Suche nach: Hu, Shuhong
- Neue Suche nach: Lv, Yingfei
- Neue Suche nach: Dai, Ning
- Neue Suche nach: Wang, Yang
- Neue Suche nach: Hu, Shuhong
- Neue Suche nach: Lv, Yingfei
- Neue Suche nach: Dai, Ning
The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.
Dokumentinformationen
Surface morphology of LPE-growth GaSb quantum dots
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II ; 2014 ; China,China
Proc. SPIE ; 9522
2015-04-13
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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