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Controlled spatial and spectral coupling of single InAs excitons to photonic crystal nanocavity modes

Hennessy, K. / Badolato, A. / Petroff, P.M. et al. | IEEE | 2005

We demonstrate a method to deterministically couple single InAs quantum dots to photonic crystal nanocavities based on high resolution ...

Optical interconnects using optical far- and near-field interactions for high-density data broadcasting

Naruse, M. / Kubota, F. / Kawazoe, T. et al. | IEEE | 2005

interactions between quantum dots, which are forbidden for far-field light, allowing sub-wavelength device functions and far-field excitation for ...

Monolithic integration of Sb-based photopumped lasers on Si

Balakrishnan, G. / Huang, S. / Khoshakhlagh, A. et al. | IEEE | 2005

device is grown on Si(100) using an AlSb quantum dot nucleation layer. ...

Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

Lifang Xu, / Patel, D. / Vaschenko, G. et al. | IEEE | 2005

A quantum dot-like behavior in the dynamics of carrier recombination is observed in InGaAsN quantum wells at temperatures at and below /spl ...

Nanophotonic memory-based computation using optical near-field interactions

Naruse, Makoto / Kawazoe, Tadashi / Sangu, Suguru et al. | IEEE | 2005

-field interactions between quantum dots, which will allow high-density integration beyond the diffraction-limit of light. ...

A single-photon resonant-cavity LED

Bennett, A.J. / Unitt, D.C. / See, P. et al. | IEEE | 2005

We describe an electrically driven single photon source consisting of a single InAs/GaAs quantum dot within a planar microcavity. Single ...

Controlling spontaneous emission rate in solid state for quantum information science

Englund, D. / Fattal, D. / Waks, E. et al. | IEEE | 2005

We enhance and suppress the excitonic lifetime of an InAs quantum dot (QD) by modifying its alignment with a resonance cavity in a photonic ...

Physics and simulation of semiconductor lasers

Koch, S.W. | IEEE | 2005

semiconductor heterostructures are discussed and nonequilibrium simulations of quantum-well and quantum-dot laser systems are presented. ...

Nanophotonics for information systems integration

Fainman, Y. / Tetz, K. / Rokitski, R. et al. | IEEE | 2005

space invariant), photonic crystals and surface plasmon polariton based components. The integration of these components with quantum dots to ...

Towards wafer-scale integration of high-repetition-rate passively mode-locked surface-emitting semiconductor lasers

Unold, H.J. / Lorenser, D. / Maas, D.J.H.C. et al. | IEEE | 2005

We demonstrate the fabrication of a key element for monolithic integration of mode-locked VECSELs, namely a quantum-dot-based SESAM with ...

Sensing of mid-infrared radiation by engineered quantum nanostructures

Towe, E. / Pal, D. | IEEE | 2005

This paper provided preliminary results on (In,Ga)As quantum dot detectors that have shown the potential to operate well beyond 150 K. In ...

Ultrafast relaxation processes in nanostructured materials

Prasankumar, R.P. / Averitt, R.D. / Taylor, A.J. | IEEE | 2005

Time-resolved dynamics of an InAs/InGaAs quantum-dots-in-a-well detector are measured at 3.9, 7.5, and 10 /spl mu/m. This technique enables ...

Fiber-coupled, high-Q AlGaAs microdisk cavities for chip-based cavity QED

Srinivasan, K. / Barclay, P.E. / Borselli, M. et al. | IEEE | 2005

Fiber-coupled, high-quality-factor (Q > 10/sup 5/) AlGaAs microdisks with embedded quantum dots are demonstrated. Microdisk lasers ...

Compound semiconductor optoelectronics research at the Australian National University

Tan, H.H. / Buda, M. / Fu, L. et al. | IEEE | 2005

materials, (iii) quantum dot electronic devices, (iv) integrated optoelectronic devices, (v) photonic crystals, (vi) semiconductor THz emitters and ...

Growth and properties of indium nitride thin films and InN nanostructures

Briot, O. / Ruffenach, S. / Gil, B. | IEEE | 2005

The growth of indium nitride quantum dots are studied. An investigation of the dot built-in strain, at the nanometric scale, performed ...

Enhanced mode extraction in AlO/sub x//GaAs microcavity pillars and circular gratings

Su, M. / Mirin, R. | IEEE | 2005

Here we report enhanced spontaneous emission intensity in AlOx/GaAs micropillars with InGaAs quantum dot (QD) ensemble emitters, measured ...

Learning new chemistry and physics with THz light

Schmuttenmaer, C.A. | IEEE | 2005

- THz probe measurements of transient photoconductivity in CdSe quantum dots, and transient photoconductivity in colloidal nanocrystalline TiO ...

Resonant Tunneling Assisted Electroluminescence in InGaN/GaN Green LEDs with Nanocrater Structures

Jae Ho Song, / Song, G.H. / Lee, J.W. et al. | IEEE | 2005

-rich quantum-dot-like localized state. Intensity analysis manifests that the resonant tunneling from the quantum well to the nanocraters ...

2005 IEEE LEOS Annual Meeting

IEEE | 2005

The following topics are dealt with: careers in optical engineering optoelectronics research; lasers in remote sensing; quantum dots ...

Fiber-coupled, high-Q AlGaAs microdisk cavities for chip-based cavity QED

Painter, O. / Srinivasan, K. / Borselli, M. et al. | IEEE | 2005

provide an efficient optical channel for studying and manipulating the microcavity-quantum dot system, with in-fiber cavity mode collection ...

Quantum dot semiconductor lasers

Reithmaier, J.P. / Deubert, S. / Somers, A. et al. | IEEE | 2004

Quantum dot lasers for 980 nm high brightness high power applications and for long wavelength telecom applications based on InP were ...

Patterned InAs quantum dot formation

Birudavolu, S. / Luong, S.Q. / Hains, C.P. et al. | IEEE | 2004

We describe the growth and characterization of InAs quantum dots (QDs) on a patterned GaAs substrate using metal organic chemical vapor ...

Dynamic characteristics of quantum dot lasers

Bhattacharya, P. | IEEE | 2004

This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD ...

Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers

Tan, H. / Kamath, K. / Bhattacharya, R. et al. | IEEE | 2004

This study presents evidence for reduced thermal conductivity in quantum dot (QD) active region from chirp characteristics in InGaAs/GaAs ...

IR quantum dot detectors with miniband tunnel extraction

Schrey, F.F. / Nguyen, D.P. / Mueller, T. et al. | IEEE | 2004

absorption properties to desired energy transitions in quantum dot based photodetectors (QDIPs). Embedding of the self organised InAs quantum dots ...

Tunneling injection quantum-dot laser: Theory and experiment

Chuang, S.L. / Kondratko, P.K. / Kim, J. et al. | IEEE | 2004

quantum-dot laser is investigated. The mechanisms of tunneling injection are presented. ...

Quantum-dot-doped waveguides produced by ion exchange

Auxier, J.M. / West, B.R. / Honkanen, S. et al. | IEEE | 2004

We present the first low-loss (< 0.5 dB/cm) ion-exchanged waveguides in glass doped with lead-salt quantum dots. Measurements of the ...

Novel infrared detectors based on semiconductor quantum dots

Zhonghui Chen, / Eui-Tae Kim, / Zhengmao Ye, et al. | IEEE | 2004

This paper reviews recent progresses in developing self-assembled InAs/GaAs quantum dots based infrared photodetectors, especially, with n ...

Cavity ring-down spectroscopy of semiconductor quantum dots

Berry, J.J. / Harvey, T.E. / Mirin, R.P. et al. | IEEE | 2004

Optimization of gain in multilayer GaInP quantum dots

Smowton, P.M. / Lutti, J. / Lewis, G.M. et al. | IEEE | 2004

Room temperature lasing in InAs quantum-dot microdisk laser

Ide, T. / Baba, T. / Tatebayashi, J. et al. | IEEE | 2004

We achieved the first room-temperature lasing in a InAs quantum-dot microdisk at a wavelength of 1.23 /spl mu/m by photopumping. We ...

WGM laser consisting of a quantum-dot-coated microsphere

Shopova, S.I. / Farca, G. / Naweed, A. et al. | IEEE | 2004

Ultralow-threshold lasing has been achieved in fused-silica microspheres coated with semiconductor quantum dots. The cw Ti:sapphire pump ...

Room-temperature pulsed operation of InGaAsN quantum dot lasers

Gao, Q. / Buda, M. / Tan, H.H. et al. | IEEE | 2004

This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 ...

Site- and energy-controlled quantum dots for photonic applications

Kapon, E. | IEEE | 2004

This paper reviews the application of growth on nonplanar, patterned substrates for producing high quality semiconductor quantum dots (QDs ...

Quantum optics of single quantum dots and single impurities

Michler, P. / Benyoucef, M. / Ulrich, S.M. et al. | IEEE | 2004

We present our investigations on triggered single-photon and photon pair emission from single quantum dots (QDs), QDs in microcavities, and ...

GaInNAs and quantum dot lasers - GaAs-based lasers for telecommunications

Forchel, A. | IEEE | 2004

)As quantum dots (QD). Routes for further improvements like the use of GaInNAsSb as proposed by J. Harris et al., Stanford, will be discussed. ...

Chemical sensors and quantum-dot lasers based on WGM microresonators

Rosenberger, A.T. | IEEE | 2004

In this paper semiconductor quantum-dot lasers and trace-gas or liquid-chemical sensors based on whispering-gallery-mode microresonators ...

MOCVD growth of InAs/GaAs quantum dots and laser diodes

Stewart, K. / Tan, H.H. / Wong-Leong, J. et al. | IEEE | 2004

This paper discusses the growth of InAs/GaAs quantum dots using MOCVD. Laser diode fabrication using stacked quantum dot structures is also ...

Electroluminescence evolution of Ge quantum-dot diodes with the fold number

Chen, K.T. / Peng, Y.H. / Hsu, C.H. et al. | IEEE | 2004

5 Gb/s elevated temperature data transmission using quantum dot lasers

Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004

We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers

Pyun, S.H. / Lee, S.H. / Lee, I.C. et al. | IEEE | 2004

Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot laser at 1.44 /spl mu/m with I/sub th/ of 62.5 mA was achieved with a ridge ...

Measurement of two-photon absorption coefficients in colloidal semiconductor quantum dots

Li Wang, / Zhihai Zhang, / Jain, R. et al. | IEEE | 2004

This work focuses on the study of the two-photon absorption (TPA) in the colloidal CdSe/ZnS quantum dots. Specifically this study deals ...

Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

Thompson, M.G. / Marinelli, C. / Chu, Y. et al. | IEEE | 2004

Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum ...

Alpha parameter in quantum-dot amplifier under optical and electrical carrier modulation

van der Poel, M. / Birkedal, D. / Hvam, J. et al. | IEEE | 2004

Alpha parameter of a long-wavelength quantum-dot amplifier near 1.3 /spl mu/m is measured to be below one even with saturated gain. A ...

Simultaneous control of position and emission energy of semiconductor quantum dots

Watanabe, S. / Pelucchi, E. / Leifer, K. et al. | IEEE | 2004

We demonstrate a simultaneous control of position and emission energy of AlGaAs/GaAs pyramidal quantum dots (QDs) grown on patterned ...

Optical properties and fabrication of polymeric waveguides containing nanocrystalline quantum dots

Fuchs, D.T. / Rapaport, R. / Chen, G. et al. | IEEE | 2004

Transport properties of a quantum dot based optically gated field-effect transistor

Rowe, M.A. / Su, M. / Mirin, R.P. | IEEE | 2004

Quantum dot infrared photodetectors (QDIPs) by MOCVD and QDIP focal plane array

Razeghi, M. / Wei Zhang, / Ho-Chul Lim, et al. | IEEE | 2004