A quantum dot-like behavior in the dynamics of carrier recombination is observed in InGaAsN quantum wells at temperatures at and below /spl sim/ 150 K. At higher temperatures defect recombination plays a dominant role.
Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 2134-2136 Vol. 3
2005-01-01
868991 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Investigation of the Carrier Dynamics of Strain Compensated InGaAsN Quantum Wells
British Library Conference Proceedings | 2005
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