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Multi-terabit per second cross gain modulation in quantum dot amplifiers via excited state lasing

Hill, M.T. / Khoe, G.D. / Van Daele, P. et al. | IEEE | 2004

A method of exploiting just the fast intra-dot relaxation in quantum dots for signal processing is examined. Simulations showing 2.5 Tb/s ...

Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy

Elarde, V.C. / Swint, R.B. / Yeoh, T.S. et al. | IEEE | 2004

We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam ...

Quantum-dot based saturable absorber with p-n junction for mode locking of solid-state lasers

Lagatsky, A.A. / Rafailov, E.U. / Sibbett, W. et al. | IEEE | 2004

We demonstrate stable mode locking in a Yb:KYW laser by using a quantum-dot saturable absorber structure with p-n-junction. A reduction in ...

Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 /spl mu/m quantum dot lasers

Marko, I.P. / Adams, A.R. / Sweeney, S.J. et al. | IEEE | 2004

We show that even in quantum dot lasers with very low threshold current density (J/sub th/ = 40-50 A/cm/sup 2/ at 300 K) the temperature ...

An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers

Uskov, A.V. / O'Reilly, E.P. / McPeake, D. et al. | IEEE | 2004

The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is ...

35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 /spl mu/m

Tan, W.K. / Bryce, A.C. / Marsh, J.H. et al. | IEEE | 2004

35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 /spl mu/m is reported for the first ...

Room temperature cw operation on 1.3 /spl mu/m Sb-based quantum dot lasers and VCSELs

Yamamoto, N. / Akahane, K. / Gozu, S. et al. | IEEE | 2004

-emitting Sb-based InGaSb quantum dot laser diode (QD-LD) and an InGaSb-QD vertical-cavity surface-emitting laser (QD-VCSEL) fabricated on GaAs ...

Characteristics of InGaAs quantum dots grown on tensile-strained GaAs/sub 1-x/P/sub x/

Kim, N.H. / Ramamurthy, P. / Mawsi, L.J. et al. | IEEE | 2004

This paper reports on the optical and structural properties of In/sub 0.5/Ga/sub 0.5/As (nominal composition) quantum dots (QDs)grown on ...

Continuous-wave operation of InAsSb/InP quantum-dot lasers near 2 /spl mu/m at room temperature

Yueming Qiu, / Uhl, D. / Keo, S. | IEEE | 2004

InAsSb quantum-dot lasers near 2 /spl mu/m were demonstrated in cw operation at room temperature with a threshold current density of below ...

Room temperature operation of patterned InGaAs quantum dot lasers fabricated by electron beats lithography and selective area epitaxy

Elarde, V.C. / Rangarajan, R. / Borchardt, J.J. et al. | IEEE | 2004

defined InGaAs quantum dots as the active region. Semiconductor laser fabrication by electron beam lithography and selective growth epitaxy are ...

Measurement and evaluation of chirp and linewidth enhancement factor of a 1.3 /spl mu/m quantum dot laser

Hatori, N. / Ishida, M. / Ebe, H. et al. | IEEE | 2004

We measured chirp of quantum dot lasers under 5 Gb/s direct-modulation, and the chirp was less than 2 GHz. From the results and some ...

High power (3W) GaInAs/(AI)GaAs quantum dot tapered laser arrays with high wavelength stability and low divergence

Auzanneau, S.-C. / Calligaro, M. / Krakowski, M. et al. | IEEE | 2004

High power (3W) and low divergence (4/spl deg/ at FWHM) are demonstrated at 990 nm using arrays of index guided GaInAs/(Al)GaAs quantum dot ...

35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004

We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

Room temperature operation of InAs-quantum-dot laser utilizing GaAs-photonic-crystal-slab-based line-defect waveguide with optical pump

Sugimoto, Y. / Inoue, K. / Ikeda, N. et al. | IEEE | 2004

Room temperature operation of lasing from optically-pumped InAs quantum dots embedded in a line defect waveguide in a two-dimensional air ...

Design of high-speed directly-modulated self-assembled quantum-dot lasers aiming at 40 Gb/s operation: experiments and model

Ishida, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2004

Modulation characteristics of 1.3 /spl mu/m quantum-dot lasers were investigated experimentally and theoretically to evaluate the K-factor ...

Improved gain and loss performance of 1.3 /spl mu/m quantum dot lasers using high growth temperature GaAs spacer layer

Walker, C.L. / Sandall, I.C. / Smowton, P.M. et al. | IEEE | 2004

We demonstrate improved gain and loss performance of 1.3 /spl mu/m In(Ga)As quantum dot laser material using high growth temperature spacer ...

Drastic enhancement of optical non-linearity in InAs quantum dot embedded in photonic crystal waveguide for all-optical switch application

Nakamura, H. / Kanamoto, K. / Nakamura, Y. et al. | IEEE | 2004

InAs quantum dots, embedded in a photonic crystal (PC) waveguide, exhibited 13 dB larger extinction ratio in transmittance than that ...

1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004

This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...

Conference Digest. 2004 IEEE 19th International Semiconductor Laser Conference (IEEE Cat. No.04CH37594)

IEEE | 2004

The following topics are dealt with: telecommunication sources; novel semiconductor devices; high-power lasers; quantum dot lasers; UV ...

Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

Gubenko, A.E. / Gadjiev, L.M. / Il'inskaya, N.D. et al. | IEEE | 2004

(/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed. ...

2004 IEEE LEOS Annual Meeting Conference Proceedings (IEEE Cat. No.04CH37581)

IEEE | 2004

program; polarization mode dispersion; microfluidic devices; quantum dot materials and devices; hardware for optical communications; sensor ...

Cyclotron emission imaging of quantum Hall devices

Ikushima, K. / Sakuma, H. / Yoshimura, Y. et al. | IEEE | 2004

of nonequilibrium electrons. Finally, we describe our attempts towards photon counting terahertz microscope with quantum-dot photon detectors ...

Self-assembled DNA molecules conjugated to GaN semiconductor nanostructures for radiative decay engineering

Neogi, A. / Neogi, P.B. / Sarkar, A. et al. | IEEE | 2004

bioconjugated DNA nucleosides sensing units with GaN quantum dots using fluorescent radiative decay engineering via resonant surface plasmon interaction. ...

Quantum Dot Development for Space Photovoltaics

Castro, Stephanie / Bailey, Sheila / Raffaelle, Ryne et al. | AIAA | 2003

InAs quantum dot microdisk injection laser

Lidong Zhang, / Hu, E. | IEEE | 2003

An airbridge contacted quantum dot microdisk diode with continuous-wave lasing at 5 K is reported. The threshold current is as low as 43 ...

Slow-light in nonuniform quantum dot waveguide

Ku, P.C. / Chang-Hasnain, C.J. / Kim, J. et al. | IEEE | 2003

We analyzed a new variable all-optical buffer using semiconductor quantum dots (QD). We show that an InAs-InGaAs-GaAs QD waveguide with 20 ...

Wideband polarization insensitivity quantum dot optical amplifier

Kita, T. / Jayavel, P. / Tanaka, H. et al. | IEEE | 2003

Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization ...

Characteristics of long wavelength quantum dots lasers

Kim, S.M. / Harris, J.S. | IEEE | 2003

In this paper characteristics of long wavelength quantum dots lasers is discussed. Small signal modulation response was measured at room ...

Quantum dots for lasers, amplifiers and computing

Bimberg, D. | IEEE | 2003

Quantum dots (QDs) enable novel photonic devices like edge and surface emitting lasers, or amplifiers with dramatically improved properties ...

Quantum dot (InAs/InGaAs DWELL) semiconductor optical amplifier

Bakonyi, Z. / Onishchukov, G. / Tunnermann, A. et al. | IEEE | 2003

In this paper, InAs/InGaAs quantum dot SOA emitting at greater than 1300 nm with gain as high as 18 dB at low with 100 mA pump current was ...

Indium aggregated quantum dot structures in InGaN compounds

Yang, C.C. / Shih-Wei Feng, / Yung-Chen Cheng, et al. | IEEE | 2003

We will summarize the optical characteristics and microstructures of the indium-aggregated quantum dots in InGaN compounds, including ...

Two photon absorption in quantum dot infrared photodetector

Wu, Z.K. / Choi, H. / Norris, T.B. et al. | IEEE | 2003

Modulation characteristics of p-doped quantum dot lasers

Deppe, D.G. / Shchekin, O.B. / Ahn, J. et al. | IEEE | 2003

Quantum dot (QD) lasers are advancing and can potentially be important for fiber optic communications because of their novel modulation ...

Linewidth enhancement factor in InGaAs quantum dot amplifiers

Schneider, S. / Borri, P. / Langbein, W. et al. | IEEE | 2003

InAs on InP quantum dots for optoelectronic applications

Reithmaier, J.P. / Schwertberger, R. / Gold, D. et al. | IEEE | 2003

This paper gives an overview about the status of the development of InP-based quantum dot structures and their applications in ...

Gain and carrier distribution in InGaAs quantum dot lasers

Smowton, P.M. | IEEE | 2003

-using measurements of gain and carrier distribution in InGaAs quantum dot laser structures. ...

Growth and optical properties of GaN-based quantum dots

Hyun Jin Kim, / Hyunseok Na, / Soon-Yong Kwon, et al. | IEEE | 2003

GaN-based quantum dots were grown by low-pressure metalorganic chemical vapor depositions. High-density In-rich InGaN/GaN quantum dots were ...

Quasistationary states of an electron in open quantum dots

Ming-Chieh Lin, / Der-San Chuu, | IEEE | 2003

The quasistationary states of an electron in a spherically N-layered open quantum dot are investigated. A novel complex eigen-solver is ...

Ordered quantum dot arrays on self-organized strain engineered templates

Notzel, R. / Mano, T. / Wolter, J.H. | IEEE | 2003

Investigation of high repetition rate mode-locked quantum dot lasers

Tan, K.T. / Thompson, M.G. / Marinelli, C. et al. | IEEE | 2003

Passive mode-locking of quantum dot laser at 18 GHz is reported for the first time. The generation of reduced jitter, Fourier transform ...

Electrically injected photonic crystal edge emitting quantum dot light source

Topolancik, J. / Pradhan, S. / Yu, P.-C. et al. | IEEE | 2003

presents a novel electrically injected 2D PC-based quantum dot edge emitting light source with coupled PC waveguide that avoids carrier ...

1.3/spl mu/m electroluminescence from MOCVD-grown quantum dots

Wong, P.S. / Xin, Y. / Birudavolu, S. et al. | IEEE | 2003

Improved temperature characteristics in quantum dot lasers with indirect-bandgap barriers

Sun, G. / Khurgin, J.B. / Soref, R.A. | IEEE | 2003

Comparison of quantum dot lasers with and without strain compensation layers

Lever, P. / Buda, M. / Tan, H.H. et al. | IEEE | 2003

In this paper, comparison of self-assembled quantum dot lasers with and without strain compensation layers is performed. It is found that ...

Quantum dot versus quantum well optical amplifiers for subpicosecond pulse propagation

Vazquez, J.M. / Zhang, J.-Z. / Galbraith, I. | IEEE | 2003

Modelling of quantum dot (QD) and well (QW) optical amplifiers elucidates their advantages and restrictions for subpicosecond pulse ...

Theoretical analysis of four wave mixing in quantum dot optical amplifiers

Berg, T.W. / Mork, J. | IEEE | 2003

The four wave mixing properties of semiconductor quantum dot amplifiers have been investigated. The combination of strong nonequilibrium ...

Use of quantum dot nanocrystals for spectrally encoded optical data storage

Chon, J.W.M. / Gu, M. | IEEE | 2003

In this paper, we demonstrate the spectral encoding capability of quantum dot nanocrystals (QDs). We mixed two different sizes of QDs in a ...

Optical characterization of strong carrier-phonon interactions in single quantum dots

Toda, Y. / Inoue, T. / Nakaoka, T. et al. | IEEE | 2003

Phonon-assisted transitions in single self-assembled InGaAs quantum dots are investigated by photoluminescence (PL) and PL excitation (PLE ...

Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA's

Lester, L.F. / Gray, A.L. / Zhang, L. et al. | IEEE | 2003

versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback ...

High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector

Stiff-Roberts, A.D. / Chakrabarti, S. / Kennerly, S. et al. | IEEE | 2003

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