In this paper, InAs/InGaAs quantum dot SOA emitting at greater than 1300 nm with gain as high as 18 dB at low with 100 mA pump current was designed and manufactured. The gain recovery dynamics of the QD-SOA sample was studied using a pump-probe set up. Extremely low linewidth enhancement factor and fast gain recovery make the device perspective for deployment in communication systems. The position of the gain peak and the bandwidth are practically temperature independent.
Quantum dot (InAs/InGaAs DWELL) semiconductor optical amplifier
2003-01-01
95760 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InAs Quantum Dot Development for Enhanced InGaAs Space Solar Cells
British Library Conference Proceedings | 2005
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