We show that even in quantum dot lasers with very low threshold current density (J/sub th/ = 40-50 A/cm/sup 2/ at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises /spl sim/60-70% of J/sub th/ at 300 K.


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    Titel :

    Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 /spl mu/m quantum dot lasers


    Beteiligte:
    Marko, I.P. (Autor:in) / Adams, A.R. (Autor:in) / Sweeney, S.J. (Autor:in) / Sellers, R. (Autor:in) / Mowbray, D.J. (Autor:in) / Skolnick, M.S. (Autor:in) / Liu, H.Y. (Autor:in) / Groom, K.M. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    168049 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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