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    Formation of Landau levels in CdSSe quantum dots by a magnetic field

    Yumoto, J. / Uesugi, N. | IEEE | 1995

    Near-field optical properties of CaAs quantum dot structures measured by photon scanning tunnelling

    Toda, Y. / Kourogi, M. / Arakawa, Y. et al. | IEEE | 1995

    Single quantum dot spectroscopy

    Gammon, D. / Snow, E.S. / Shanabrook, B.V. et al. | IEEE | 1996
    Semiconductor quantum dots localize the exciton in all three spatial dimensions and completely quantize the exciton energy spectrum. In the ...

    To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge

    Asryan, L.V. / Suris, R.A. | IEEE | 1996
    An extension of the theory of quantum dot (QD) lasers is carried out which takes proper account of QD charge. The inclusion of the charge ...

    Low-temperature near-field spectroscopy of quantum dots

    Arakawa, Y. / Toda, Y. / Nagamune, Y. et al. | IEEE | 1996
    We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present ...

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    Epitaxial growth and physics of nanostructures for quantum dot lasers

    Arakawa, Y. | IEEE | 1996
    We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm ...

    Room temperature operation of MBE self-organized InGaAs quantum dot lasers

    Kamath, K. / Phillips, J. / Sosnovski, T. et al. | IEEE | 1996
    Quantum box lasers are expected to have very low threshold current densities, ultrahigh temperature stability of threshold current and high ...

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

    Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons

    Nakayama, H. / Arakawa, Y. | IEEE | 1996
    We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate ...

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