Method is applied in middle of fabrication process: (a) after mask region is formed, diffused-boron region is etched; (b) etching is left incomplete for ion implantation; (c) boron ions are implanted into region to define accurately crucial geometry of V-groove; (d) groove is etched to completion, forming two well-defined diffusion regions that serve as source and drain of transistor. Remaining process is conventional.


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    Titel :

    Improved process control for VMOS FET's


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1980-06-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :




    VMOS Power Transistors in Automotive Systems - An Update

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    VMOS Power Transistors in Automotive Systems - An Update

    Blanchard, Richard | SAE Technical Papers | 1981