Method is applied in middle of fabrication process: (a) after mask region is formed, diffused-boron region is etched; (b) etching is left incomplete for ion implantation; (c) boron ions are implanted into region to define accurately crucial geometry of V-groove; (d) groove is etched to completion, forming two well-defined diffusion regions that serve as source and drain of transistor. Remaining process is conventional.
Improved process control for VMOS FET's
NASA Tech Briefs ; 4 , 4
1980-06-01
Sonstige
Keine Angabe
Englisch
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