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Self-organized iron silicide nano dots on silicon [001] substrate

Chou, L.J. / Chuen, Y.L. | IEEE | 2003

disilicide quantum dots have been successfully grown by a UHV electron gun evaporation system with vacuum level better that 10/sup -9/ torr, using ...

New laser and detector structures for mid-infrared

Joullie, A. / Christol, P. / Rodriguez, J.B. et al. | IEEE | 2003

systems based on type-II InAs/GaSb superlattices or InSb/GaSb quantum dots. ...

Temperature characteristics of long-wavelength quantum dash lasers on [110] and [111]A InP

Zuo, Z. / Wang, R.H. / Newell, T.C. et al. | IEEE | 2003

This study reports on the fabrication and lasing characteristics of InAs quantum dot (QD) lasers on GaAs substrates grown by metalorganic ...

Diode-pumped Nd:YVO/sub 4/ 1.3 /spl mu/m laser passively Q-switched with the PbS-doped glass

Savitski, V.G. / Malyarevich, A.M. / Yumashev, K.V. et al. | IEEE | 2003

In this paper, we present a silicate glass doped with PbS-quantum dots (QDs) as new saturable absorber (SA) for Q-switching of a diode ...

Conference on Lasers and Electro-Optics (CLEO) (IEEE Cat. No.CH37419-TBR)

IEEE | 2003

solitons; quantum dot lasers; fusion laser engineering; photonic crystal lasers; modulation formats and clock recovery; optical MEMS; fluorescence ...

Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs

Liang, H. / Yu, L.S. / Qi, Y.D. et al. | IEEE | 2003

model of quantum dot clusters in the InGaN/GaN pseudo-quantum wells, with a small potential barrier at the boundary of the quantum dots. ...

CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671)

IEEE | 2003

; quantum dot physics; waveguide devices; femtosecond laser processing; microfabrication and microsystem; organic light emitting diode; optical ...

High speed quantum dot lasers

Bhattacharya, P. / Ghosh, S. / Wu, Z.-K. et al. | IEEE | 2002

Self-organized quantum dot lasers, grown by MBE or MOVPE, have demonstrated superior characteristics such as large differential gain, ultra ...

Spin polarized quantum dot light emitters

Bhattacharya, P. / Ghosh, S. | IEEE | 2002

Summary form only given. In this paper, we describe the growth of (In,Mn)As self-organized quantum dots, or "diluted magnetic quantum dots ...

Normal-incidence quantum dot infrared photodetectors

Zhonghui Chen, / Zhengmao Ye, / Eui-Tae Kim, et al. | IEEE | 2002

) based on epitaxial InAs/InAlGaAs quantum dots. ...

Optimization of InGaAs quantum dots for optoelectronic applications

Ruifei Duan, / Baoqiang Wang, / Zhanping Zhu, et al. | IEEE | 2002

Quantum dot infrared photodetectors (QDIP) are at the center of research interest nowadays. However, the real QDIP is inferior to those ...

Interdiffusion in InGaAs quantum dots by ion implantation

Lever, P. / Tan, H.H. / Reece, P. et al. | IEEE | 2002

Implantation induced interdiffusion of InGaAs quantum dots has been carried out using hydrogen and arsenic ions. Large energy shifts and ...

Self-sustained Q-switching in InGaAs quantum dot lasers

Matthews, D.R. / Summers, H.D. / Smowton, P.M. et al. | IEEE | 2002

We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable ...

Ultrafast optical signal processing using semiconductor quantum dot amplifiers

Berg, T.W. / Mork, J. | IEEE | 2002

The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices ...

1300 nm on gallium arsenide: quantum dots vs GaInNAs

Fiore, A. / Markus, A. / Chen, J.X. et al. | IEEE | 2002

quantum dots (QDs). By directly comparing the radiative properties of identical structures comprising QDs and GaInNAs QWs, we evidence the ...

Growth and spectroscopy of II-VI CdSe quantum dots

Cavenett, B.C. / Tang, X. / Bradford, C. et al. | IEEE | 2002

In this paper we review the recent progress in the growth and spectroscopy of CdSe quantum dots. In particular, atomic layer epitaxy (ALE ...

Absence of filamentation in quantum-dot lasers. Theory and experiment

Chow, W.W. / Schneider, H.C. / Pearce, E.J. et al. | IEEE | 2002

We theoretically and experimentally investigate the lateral mode behavior of quantum-dot lasers, and demonstrate the absence of ...

High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

Wonfor, A. / Tan, K.T. / Ribbat, C. et al. | IEEE | 2002

By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value ...

Cavity solitons and self organized patterns in semiconductor quantum dot microcavities

Maggipinto, T. / Perrini, I.M. / Brambilla, M. et al. | IEEE | 2002

Summary form only given. We propose to use InAs Quantum Dots (QD), embedded in GaAs, as a new active material for pattern and localized ...

Growth of InGaAs quantum dots by metal organic chemical vapour deposition

Lever, P. / Tan, H.H. / Jagadish, C. | IEEE | 2002

In/sub 0.5/Ga/sub 0.5/As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these ...

Differential-gain damping in quantum dot lasers due to wetting layer states

Matthews, D.R. / Summers, H.D. / Smowton, P.M. et al. | IEEE | 2002

. To investigate this effect experimentally, we have measured the modal gain as a function of injection current on a set of InGaAs quantum dot ...

Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

Stewart, K. / Buda, M. / Wong-Leung, J. et al. | IEEE | 2002

In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared ...

The effect of quantum dots on the infrared cyclotron resonance in HgSe:Fe

Tran-Anh, T. / Hansel, S. / Kirste, A. et al. | IEEE | 2002

MBE-grown quantum dots of HgSe:Fe were investigated by infrared magnetotransmission using the single-turn-coil technique to generate ...

InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers

Kurimoto, M. / Ganapathy, S. / Zhang, X.Q. et al. | IEEE | 2002

GaNAs strain compensating layers have been used to obtain 1.5 /spl mu/m luminescence from InAs quantum dots, and this fundamental scheme ...

Bias-dependent tunable response of normal incidence long wave infrared quantum dot detectors

Krishna, S. / Rotella, P. / Raghavan, S. et al. | IEEE | 2002

We report development of array compatible individual high-performance quantum dot pixel structures that allow for spectral tuning by the ...

Progress in quantum dots and photonic crystal for future photonic network devices in Japan

Arakawa, Y. | IEEE | 2002

Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots

Fu, L. / Lever, P. / Tan, H.H. et al. | IEEE | 2002

/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only ...

Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Huffaker, D.L. / EL-Emawy, A.R. / Birudavolu, S. et al. | IEEE | 2002

High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications

Deubert, S. / Klopf, F. / Reithmaier, J.P. et al. | IEEE | 2002

Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35/spl ...

Modulation characteristics of high-speed tunnel injection In/sub 0.4/Ga/sub 0.6/As quantum dot lasers

Pradhan, S. / Ghosh, S. / Bhattacharya, P. | IEEE | 2002

InGaAs/GaAs quantum dot lasers in which electrons are injected to the lasing ground state of the dots by tunneling. We report here the room ...

Large enhancement of optical nonlinearity using quantum dots embedded in a photonic crystal structure for all-optical switch applications

Nakamura, H. / Kanamoto, K. / Nakamura, Y. et al. | IEEE | 2002

Influence of substrate orientation on self-assembled InAs/GaAs quantum dots for long wavelength emission grown by molecular beam epitaxy

Saravanan, S. / Vaccaro, P.O. / Zanardi, J.M. et al. | IEEE | 2002

High performance long-wavelength QD diode lasers on GaAs substrates

Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002

Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

Recent developments in avalanche photodiodes

Campbell, J.C. / Shuling Wang, / Xiaoguang Zheng, et al. | IEEE | 2002

-violet PIN photodiodes, and quantum dot infrared photodetectors (QDIPs). ...

Optical properties of AlInGaN quaternary alloys

Huang, J.S. / Dong, X. / Luo, X.D. et al. | IEEE | 2002

result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to ...

The optical properties of very thin-layer CdTe/ZnSe

Lap Van Dao, / Makino, H. / Takai, T. et al. | IEEE | 2002

quantum dots in this samples. ...

Microseconds domain switching-speed wavelength-multiplexed optical scanner

Yaqoob, Z. / Riza, N.A. | IEEE | 2002

nm. Other options for high-speed widely tunable lasers include quantum dot lasers. ...

Three dimensionally confined photon systems

Reinecke, T.L. | IEEE | 2002

fifty years. We have studied emission rates from the InGaAs quantum wells and from InGaAs quantum dots in these cavities. ...

Femtosecond interactions in semiconductor quantum dots

Klimov, V.I. | IEEE | 2001

as small as 5%. These nanoparticles are also known as nanocrystals or colloidal quantum dots (QDs). The sub-10-nm size range corresponds to a ...

Metalorganic vapor phase epitaxy of quantum dots

Coleman, J.J. / Yeoh, T.S. | IEEE | 2001

A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography ...

Quantum dot lasers for high power and telecommunication applications

Reithmaier, J.P. / Klopf, F. / Krebs, R. | IEEE | 2001

An overview is given about the recent development of high performance quantum dot lasers for 980 nm high power and 1.3 /spl mu/m ...

Low frequency chirp self-assembled InGaAs/GaAs quantum dot lasers

Hatori, N. / Sugawara, M. / Akiyama, T. et al. | IEEE | 2001

We measured and compared frequency chirp between a quantum dot laser and a quantum well laser. The chirp of the quantum dot laser was below ...

Excitation dependence of lateral beam width in a quantum-dot laser

Schneider, H.C. / Chow, W.W. | IEEE | 2001

We investigate the influence of the quantum-dot active material on the lateral field distribution in an edge-emitting geometry. We use the ...

Carrier dynamics of single InAs quantum dots in a high density sample

Sang-Kee Eah, / Sungchui Hohng, / Wonho Jhe, et al. | IEEE | 2001

We performed time-resolved photoluminescence (PL) experiments on single InAs quantum dots in a high density sample. The PL rise time is ...

Room-temperature CW operation of InP-based long-wavelength InAs quantum dot lasers

Saito, H. / Nishi, K. / Sugou, S. | IEEE | 2001

Long-wavelength quantum-dot lasers were fabricated on InP (311)B substrates by using high-dense InAs quantum dots (9 /spl times/10/sup 10 ...

Saturation intensity in InAs quantum dot and its application to all-optical switches

Nakamura, I. / Nishikawa, S. / Kohmoto, S. et al. | IEEE | 2001

in simultaneous achievement of the above requirements. Quantum dots (QDs) are promising candidates for large ONL materials due to their delta ...

Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots

Kyoungsik Kim, / Norris, T.B. | IEEE | 2001

Long-wavelength quantum dots: carrier dynamics and applications to lasers and light emitting diodes

Deppe, D.G. / Chen, H. / Zou, Z. et al. | IEEE | 2001

High temperature continuous wave operation of InAs quantum dot lasers near 1.3 /spl mu/m

Qiu, Y. / Gogna, P. / Forouhar, S. et al. | IEEE | 2001

Confined modes of two dimensional photonic crystal defect cavities with Indium Arsenide quantum dots

Yoshie, T. / Scherer, A. / Hao Chen, et al. | IEEE | 2001

quantum dots as active material. Single defect donor modes were found to have well localized close to the single defect. ...